Influence of temperature inhomogeneity and trap charge on current imbalance of SiC MOSFETs

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-02-12 DOI:10.1016/j.sse.2025.109085

Chunsheng Guo, Jiapeng Li, Yamin Zhang, Hui Zhu, Meng Zhang, Shiwei Feng

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引用次数: 0

Abstract

For SiC MOSFETs, either multi-chip modules or multiple discrete devices need to be connected in parallel to achieve high current capacities. However, the current imbalance that occurs in parallel applications can reduce device reliability. This paper focused on the effects of both temperature inhomogeneity and gate trap charge on the current imbalance behavior of SiC MOSFETs, and it also presented a comparison study of the effects of threshold voltage differences on the current inhomogeneity. Finally, the effects of the three factors above on the current inhomogeneity characteristics of SiC MOSFETs were compared in terms of their voltage and time dimensions. The results show that the percentage of the drain-source current imbalance due to temperature inhomogeneity for static processes can be maintained consistently at more than 10%. For dynamic processes, the percentage of the drain-source current imbalance due to temperature inhomogeneity can similarly exceed 10%.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.