Suppression of de-trapping by remanent polarization in dual-mechanism flash memory

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-02-01 DOI:10.1016/j.sse.2024.109049

Eui Joong Shin, Jaejoong Jeong, Gyusoup Lee, Seongho Kim, Byung Jin Cho

引用次数: 0

Abstract

Recently, a dual-mechanism Flash memory cell that utilizes both charge trapping and polarization switching as the memory mechanism was proposed [1]. In this work, the data retention characteristics of the dual-mechanism memory are extensively studied. Lifetime and activation energy analyses show that the remanent polarization in the blocking layer of the dual-mechanism memory suppresses the de-trapping of electrons in the charge trap layer. A quantitative analysis of the trapped charge and remanent polarization revealed that the electrons can be stored in a potential well created by the remanent polarization, which effectively improves the retention characteristics.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.