双机制快闪记忆体中残余极化抑制去阱

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-02-01 DOI:10.1016/j.sse.2024.109049

Eui Joong Shin, Jaejoong Jeong, Gyusoup Lee, Seongho Kim, Byung Jin Cho

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引用次数: 0

摘要

近年来，提出了一种利用电荷捕获和极化开关作为存储机制的双机制闪存单元。本文对双机制存储器的数据保留特性进行了广泛的研究。寿命和活化能分析表明，双机制记忆阻滞层的剩余极化抑制了电荷阱层中电子的去俘获。对捕获电荷和剩余极化的定量分析表明，电子可以存储在剩余极化产生的势阱中，有效地改善了保留特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Suppression of de-trapping by remanent polarization in dual-mechanism flash memory

Recently, a dual-mechanism Flash memory cell that utilizes both charge trapping and polarization switching as the memory mechanism was proposed [1]. In this work, the data retention characteristics of the dual-mechanism memory are extensively studied. Lifetime and activation energy analyses show that the remanent polarization in the blocking layer of the dual-mechanism memory suppresses the de-trapping of electrons in the charge trap layer. A quantitative analysis of the trapped charge and remanent polarization revealed that the electrons can be stored in a potential well created by the remanent polarization, which effectively improves the retention characteristics.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.