Equivalence of proton-induced displacement damage in InP-based HEMT

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-02-01 DOI:10.1016/j.sse.2024.109048

Bo Liu , Yong-Bo Su , Ren-Jie Liu , Zhi Jin , Chao Zhang , Ying-Hui Zhong

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Abstract

Radiation experiments of 560 keV, 2 MeV, and 10 MeV proton have been performed on InP-based High Electron Mobility Transistors (HEMTs), the damage mechanisms and damage equivalence are systematically studied. The irradiated devices have exhibited the reduction of transconductance, the positive shift of threshold voltage, and the reduction in drain-source current. Nonionizing energy loss (NIEL) was calculated to investigate the relationship between the degradation of the device and proton energy, but the damage factors of the devices do not exhibit a perfect linear relationship with NIEL across all the energies. The deviation mainly lies in the stopping power of the target material for incident protons. An improved NIEL calculation method is proposed based on Geant4 simulation software, which eliminates the influence of stopping power. And thus, the equivalence of displacement damage in InP-based HEMTs has been constructed among 560 keV, 2 MeV, and 10 MeV proton irradiation.

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基于inp的HEMT中质子诱导位移损伤的等效性

在基于inp的高电子迁移率晶体管（hemt）上进行了560kev、2mev和10mev质子的辐射实验，系统地研究了其损伤机理和损伤等效性。辐照后的器件表现出跨导减小、阈值电压正移和漏源电流减小的特点。通过计算非电离能损失（NIEL）来研究器件的退化与质子能量之间的关系，但器件的损伤因子与NIEL在所有能量下都不表现出完美的线性关系。这种偏差主要在于靶材料对入射质子的阻挡能力。提出了一种基于Geant4仿真软件的改进NIEL计算方法，消除了停车功率的影响。因此，在560 keV、2 MeV和10 MeV质子辐照下，建立了inp基hemt中位移损伤的等效性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.