铁电埋藏氧化物增强FD-SOI MOSFET的阈值电压调谐

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-02-01 DOI:10.1016/j.sse.2024.109052

Sorin Cristoloveanu , Etienne Nowak , Justine Barbot , Laurent Grenouillet , Ionut Radu

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引用次数: 0

摘要

铁电埋藏氧化物可显著提高FD-SOI晶体管阈值电压的可调性。极化机制使得阈值电压随后门电压的变化率从4 - 5%大幅增加到50%以上。我们的模型和仿真表明，在地平面上施加1 V时，阈值电压移动了半伏特，这大大提高了功耗和速度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Enhanced threshold voltage tuning in FD-SOI MOSFET with ferroelectric buried oxide

A ferroelectric buried oxide is demonstrated to considerably enhance the tunability of the threshold voltage in FD-SOI transistors. The polarization mechanism makes the rate of change of threshold voltage with back-gate voltage increase tremendously from 4–5 % to more than 50 %. Our model and simulations show that with 1 V applied on the ground-plane, the threshold voltage is shifted by half a volt, which dramatically improves power consumption and speed.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.