Yu Yan , Weijia Song , Cunhua Dou , Xing Zhao , Shujian Xue , Yong Xu , Binhong Li , Yun Wang , Tianchun Ye , Sorin Cristoloveanu
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A planar core-shell junctionless transistor compatible with FD-SOI Technology
A planar version of Core-Shell Junctionless transistor (CS-JL FET), fully compatible with standard FDSOI process, is proposed and documented. An undoped region (shell) is added on top of a heavily doped core that bridges the source and drain terminals. While the fundamental advantages of junctionless (JL) MOSFET are maintained, its demerits are eliminated. The CS-JL FET features normally-off operation, high current drive and excellent mobility. The impact of layer thickness, core doping, back bias and gate length are discussed.
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.