Epitaxial p+pn+ vertical short diodes for microbolometers

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
R.M.R. Kubica , A. Albouy , M. Le Cocq , F. Gonzatti , F. Balestra , P. Leduc
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引用次数: 0

Abstract

In the LWIR band, pn diodes are an attractive solution for thermometers in microbolometers. In this paper, epitaxial short p+pn+ diodes were studied at 303–343 K. A TCC ranging from 8 %.K1 to 3 %.K1 between 0.2 V and 0.8 V and a current noise dominated by flicker noise were measured. Finally, at 303 K and an integration time of 40 ms, a thermal resolution ranging from 5.102 K to 1.104 K was obtained for bias currents between 5.1011 A and 2.102 A.
微辐射热计用外延p+pn+垂直短二极管
在LWIR波段,pn二极管是微热计中温度计的一个有吸引力的解决方案。本文研究了在303 ~ 343 K下的外延短p+pn+二极管。TCC范围从8%。K−1 ~ 3%。测量了0.2 V ~ 0.8 V之间的K−1和以闪烁噪声为主的电流噪声。最后,在303 K和40 ms的积分时间下,在5.10−11 a和2.10−2 a之间的偏置电流下,获得了5.10−2 K到1.10−4 K的热分辨率。
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来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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