微辐射热计用外延p+pn+垂直短二极管

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-05-06 DOI:10.1016/j.sse.2025.109123

R.M.R. Kubica , A. Albouy , M. Le Cocq , F. Gonzatti , F. Balestra , P. Leduc

引用次数: 0

摘要

在LWIR波段，pn二极管是微热计中温度计的一个有吸引力的解决方案。本文研究了在303 ~ 343 K下的外延短p+pn+二极管。TCC范围从8%。K−1 ~ 3%。测量了0.2 V ~ 0.8 V之间的K−1和以闪烁噪声为主的电流噪声。最后，在303 K和40 ms的积分时间下，在5.10−11 a和2.10−2 a之间的偏置电流下，获得了5.10−2 K到1.10−4 K的热分辨率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Epitaxial p+pn+ vertical short diodes for microbolometers

In the LWIR band, pn diodes are an attractive solution for thermometers in microbolometers. In this paper, epitaxial short

p^{+} p n^{+}

diodes were studied at 303–343 K. A

T C C

ranging from 8 %.K

^{- 1}

to 3 %.K

^{- 1}

between 0.2 V and 0.8 V and a current noise dominated by flicker noise were measured. Finally, at 303 K and an integration time of 40 ms, a thermal resolution ranging from 5.10

^{- 2}

K to

1.1 0^{- 4}

K was obtained for bias currents between

5.1 0^{- 11}

A and

2.1 0^{- 2}

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.