多金属氧酸盐影响下纳米线的行为：损耗和增强模式的比较研究

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-05-11 DOI:10.1016/j.sse.2025.109145

Ankit Dixit , Ramesh Ghosh , Jake Jacobs , Naveen Kumar , Laia Vila-Nadal , Asen Asenov , Douglas J. Paul , Vihar Georgiev

{"title":"多金属氧酸盐影响下纳米线的行为：损耗和增强模式的比较研究","authors":"Ankit Dixit , Ramesh Ghosh , Jake Jacobs , Naveen Kumar , Laia Vila-Nadal , Asen Asenov , Douglas J. Paul , Vihar Georgiev","doi":"10.1016/j.sse.2025.109145","DOIUrl":null,"url":null,"abstract":"<div><div>Polyoxometalates (POMs) are one of the most adaptable families of inorganic molecular materials due to the wide variety of shapes and properties they can exhibit. In this paper, a thorough study has been carried out on the effect of the position of the POMs molecule on the nanowire transistor’s surface with the nanowire transistor’s different operating modes. The aims of this research paper are as follows: (a) to investigate the relationship between device operation and sensitivity with respect to the mode of operation i.e. depletion and enhancement mode (b) to establish the impact on the electrical parameters such as electric field and potential in the nanowire (NW) and (c) to execute sensitivity analysis of the device with respect to the position of the POMs on the device surface. Our simulation work reported here provides design rules for fabricating the optimized device geometry with improved performance to be used for sensing applications in molecular based electronic devices.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"228 ","pages":"Article 109145"},"PeriodicalIF":1.4000,"publicationDate":"2025-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Nanowire behavior under the influence of Polyoxometalates: A Comparative study of depletion and enhancement modes\",\"authors\":\"Ankit Dixit , Ramesh Ghosh , Jake Jacobs , Naveen Kumar , Laia Vila-Nadal , Asen Asenov , Douglas J. Paul , Vihar Georgiev\",\"doi\":\"10.1016/j.sse.2025.109145\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Polyoxometalates (POMs) are one of the most adaptable families of inorganic molecular materials due to the wide variety of shapes and properties they can exhibit. In this paper, a thorough study has been carried out on the effect of the position of the POMs molecule on the nanowire transistor’s surface with the nanowire transistor’s different operating modes. The aims of this research paper are as follows: (a) to investigate the relationship between device operation and sensitivity with respect to the mode of operation i.e. depletion and enhancement mode (b) to establish the impact on the electrical parameters such as electric field and potential in the nanowire (NW) and (c) to execute sensitivity analysis of the device with respect to the position of the POMs on the device surface. Our simulation work reported here provides design rules for fabricating the optimized device geometry with improved performance to be used for sensing applications in molecular based electronic devices.</div></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"228 \",\"pages\":\"Article 109145\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2025-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110125000905\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110125000905","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

多金属氧酸盐（pom）是适应性最强的无机分子材料家族之一，因为它们可以表现出各种各样的形状和性质。本文深入研究了POMs分子在纳米线晶体管表面的位置随纳米线晶体管不同工作模式的影响。本研究论文的目的是：(a)研究器件运行与灵敏度之间的关系，在运行模式即损耗和增强模式下；(b)建立对纳米线（NW）中电场和电势等电学参数的影响；(c)对器件表面上POMs的位置进行灵敏度分析。我们在此报告的模拟工作为制造具有改进性能的优化器件几何结构提供了设计规则，可用于基于分子的电子器件的传感应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Nanowire behavior under the influence of Polyoxometalates: A Comparative study of depletion and enhancement modes

Polyoxometalates (POMs) are one of the most adaptable families of inorganic molecular materials due to the wide variety of shapes and properties they can exhibit. In this paper, a thorough study has been carried out on the effect of the position of the POMs molecule on the nanowire transistor’s surface with the nanowire transistor’s different operating modes. The aims of this research paper are as follows: (a) to investigate the relationship between device operation and sensitivity with respect to the mode of operation i.e. depletion and enhancement mode (b) to establish the impact on the electrical parameters such as electric field and potential in the nanowire (NW) and (c) to execute sensitivity analysis of the device with respect to the position of the POMs on the device surface. Our simulation work reported here provides design rules for fabricating the optimized device geometry with improved performance to be used for sensing applications in molecular based electronic devices.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.