Optimizing unconventional trilayer SOTs for field-free switching

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-05-02 DOI:10.1016/j.sse.2025.109135

Nils Petter Jørstad , Wolfgang Goes , Siegfried Selberherr , Viktor Sverdlov

引用次数: 0

Abstract

The symmetry and magnitude of unconventional spin–orbit torques in ferromagnet/heavy metal/ferromagnet trilayers are investigated. Several spin-generating mechanisms are considered such as the anomalous Hall effect, anisotropic magnetoresistance, the Rashba–Edelstein effect, and the spin Hall effect. Optimal material thicknesses and magnetization configurations for maximizing out-of-plane spin torques for breaking the bilayer symmetry are presented. Furthermore, field-free switching simulations of a perpendicular SOT-MRAM utilizing the optimized trilayer torques are demonstrated, showing improved switching currents compared to another reported trilayer-based device.

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优化用于无场开关的非常规三层sot

研究了铁磁体/重金属/铁磁体三层结构中非常规自旋轨道转矩的对称性和大小。考虑了几种自旋产生机制，如反常霍尔效应、各向异性磁阻、Rashba-Edelstein效应和自旋霍尔效应。提出了使破坏双层对称的面外自旋力矩最大化的最佳材料厚度和磁化配置。此外，利用优化的三层扭矩对垂直SOT-MRAM进行了无场开关模拟，与另一种基于三层的器件相比，显示出更好的开关电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.