设置和重置动态对HfO2， Al2O3和双层记忆电阻器的影响

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-10-04 DOI:10.1016/j.sse.2025.109262

G. Vinuesa , T. del Val , K. Kalam , H. García , M.B. González , F. Campabadal , S. Dueñas , H. Castán

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引用次数: 0

摘要

在本研究中，研究了HfO2， Al2O3和双层（HfO2 + Al2O3）氧化物在三种结构中的电阻开关。电学表征揭示了这些配置中开关动力学和性能的差异，突出了氧化物成分和结构对器件行为的影响。复位所需的时间被详细定义和研究，显示出与施加电压的指数依赖关系。最后，对设置和复位瞬态对器件的多电平能力的影响进行了初步评估。

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Effect of set and reset dynamics on HfO2, Al2O3, and bilayer memristors

In this study, resistive switching in three structures with HfO

_{2}

, Al

_{2}

_{3}

, and bilayer (HfO

_{2}

+ Al

_{2}

_{3}

) oxides is studied. Electrical characterization reveals differences in switching dynamics and performance across these configurations, highlighting the impact of oxide composition and structure on device behavior. The time needed to reset is defined and studied in detail, showing an exponential dependence with the applied voltage. Finally, an initial assessment of the effect that the set and reset transient has on the multilevel capabilities of the devices is made.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.