利用LPCVD SiN钝化技术增强超薄势垒AlGaN/GaN hemt的高功率应用

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-10-02 DOI:10.1016/j.sse.2025.109260

Jui-Sheng Wu , Chen-Hsi Tsai , You-Chen Weng , Edward Yi Chang

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引用次数: 0

摘要

超薄势垒AlGaN/GaN hemt提供无栅极凹槽的解决方案，但存在高导通电阻和电流降解的问题。在这项工作中，制备了具有1 nm GaN帽和5 nm Al0.22Ga0.78N势垒的超薄AlGaN/GaN势垒异质结构，然后通过LPCVD SiN钝化四种不同厚度（50,60,150和220 nm）来解决与薄势垒结构相关的低载流子密度问题。220 nm LPCVD-SiN钝化器件具有较高的内径，最大可达907 mA/mm，最低导通电阻为8.9 Ω·mm。此外，为了评估电流输出的稳定性，更薄的LPCVD-SiN层在高达150°C的on状态应力下表现出更好的电流稳定性。这些发现突出了超薄势垒AlGaN/GaN hemt设计对未来高功率GaN应用的好处。

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Enhancing ultra-thin-barrier AlGaN/GaN HEMTs with LPCVD SiN passivation for high-power applications

Ultra-thin-barrier AlGaN/GaN HEMTs offer a gate-recess-free solution but suffer from high on-resistance and current degradation. In this work, ultra-thin-barrier AlGaN/GaN heterostructures with a 1-nm GaN cap and 5-nm Al_0.22Ga_0.78N barrier were fabricated, followed by LPCVD SiN passivation of four different thicknesses (50, 60, 150, and 220 nm) to solve the low carrier density issues associated with thin-barrier structures. The 220 nm LPCVD-SiN passivated device achieves a high I_D,max of 907 mA/mm and the lowest on-resistance of 8.9 Ω·mm. In addition, to evaluate the stability of current output, thinner LPCVD-SiN layers exhibit better current stability under ON-state stress up to 150 °C. These findings highlight the benefits of ultra-thin-barrier AlGaN/GaN HEMTs design for future high-power GaN applications.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.