SiNx RRAMs performance with different stoichiometries

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-09-23 DOI:10.1016/j.sse.2025.109252

A.E. Mavropoulis , G. Pissanos , N. Vasileiadis , P. Normand , G.Ch. Sirakoulis , P. Dimitrakis

引用次数: 0

Abstract

The microstructure of SiN_x is strongly affected by its stoichiometry, x. The stoichiometry of SiN_x thin films can be modified by adjusting the gas flow rates during LPCVD deposition. The deficiency or excess of Si atoms enhance the formation of defects such as nitrogen vacancies, silicon dangling bonds etc., and thus can enable performance tuning of the resulting MIS RRAM devices. DC electrical characterization, impedance spectroscopy and constant voltage stress measurements were carried out to investigate the properties of non-stoichiometric silicon nitride films as resistive switching material. The average SET time for each device was measured by applying voltage ramps. Improvement in the SET/RESET voltages and SET time is observed. Finally, the stoichiometric film exhibits the lowest breakdown acceleration factor, while the Si-rich film the highest.

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不同化学计量的SiNx rram性能

在LPCVD沉积过程中，可以通过调节气体流速来改变SiNx薄膜的化学计量。硅原子的缺乏或过量会增加氮空位、硅悬空键等缺陷的形成，从而可以实现MIS RRAM器件的性能调整。采用直流电学表征、阻抗谱和恒压应力测量等方法研究了非化学计量氮化硅薄膜作为阻性开关材料的性能。通过施加电压坡道来测量每个器件的平均SET时间。观察到SET/RESET电压和SET时间的改善。化学计量膜的击穿加速因子最低，而富硅膜的击穿加速因子最高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.