Solid-state Electronics最新文献_第2页

Epitaxial p+pn+ vertical short diodes for microbolometers 微辐射热计用外延p+pn+垂直短二极管

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-05-06 DOI: 10.1016/j.sse.2025.109123

R.M.R. Kubica , A. Albouy , M. Le Cocq , F. Gonzatti , F. Balestra , P. Leduc

引用次数: 0

Excimer laser annealing of boron thin-films to fabricate large-area low-defect p+ Si regions 硼薄膜准分子激光退火制备大面积低缺陷p+ Si区

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-05-05 DOI: 10.1016/j.sse.2025.109143

Vinayak V. Hassan, Asma Attariabad, Lis K. Nanver

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引用次数: 0

Optimizing unconventional trilayer SOTs for field-free switching 优化用于无场开关的非常规三层sot

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-05-02 DOI: 10.1016/j.sse.2025.109135

Nils Petter Jørstad , Wolfgang Goes , Siegfried Selberherr , Viktor Sverdlov

引用次数: 0

Implementation and investigation of high voltage CMOS device in advanced Sub-90 nm node processes 先进sub - 90nm节点制程中高压CMOS器件的实现与研究

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-04-28 DOI: 10.1016/j.sse.2025.109142

Xin Huang , Yintong Zhang , Zhaozhao Xu , Ziquan Fang , Donghua Liu , Wensheng Qian

引用次数: 0

Preliminary results on industrial 28nm FD-SOI phase change memory at cryogenic temperature 低温下工业28nm FD-SOI相变存储器的初步结果

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-04-27 DOI: 10.1016/j.sse.2025.109141

Philippe Galy , Joao Henrique Quintino Palhares , Lorena Anghel , Yann Beilliard , Fabien Alibart , Dominique Drouin , Jury Sandrini , Franck Arnaud

引用次数: 0

Investigation into the impact of source-drain series resistance on electrical parameters of AlGaN/GaN high electron mobility transistors 源漏串联电阻对高电子迁移率AlGaN/GaN晶体管电学参数影响的研究

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-04-26 DOI: 10.1016/j.sse.2025.109138

Eduardo Canga Panzo , Nilton Graziano , Eddy Simoen , Maria Glória Caño de Andrade

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引用次数: 0

Performance of Pulse-Programmed memristive crossbar array with bimodally distributed stochastic synaptic weights 具有双峰分布随机突触权的脉冲编程记忆栅阵列的性能

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-04-24 DOI: 10.1016/j.sse.2025.109128

Nadine Dersch , Eduardo Perez , Christian Wenger , Christian Roemer , Mike Schwarz , Benjamin Iniguez , Alexander Kloes

引用次数: 0

Operation of junctionless nanowire transistors down to 4.2 Kelvin 操作低至4.2开尔文的无结纳米线晶体管

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-04-23 DOI: 10.1016/j.sse.2025.109133

F.E. Bergamaschi , J.A. Matos , M. de Souza , S. Barraud , M. Cassé , O. Faynot , M.A. Pavanello

引用次数: 0

Investigation on the performance limits of Dirac-source FETs 狄拉克源场效应管性能极限的研究