Model of threshold voltage and drain current in core-shell junctionless transistor on FD-SOI

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-06-08 DOI:10.1016/j.sse.2025.109173

Cunhua Dou , Weijia Song , Yu Yan , Xuan Zhang , Zhiyu Tang , Binhong Li , Yong Xu , Sorin Cristoloveanu

引用次数: 0

Abstract

The core–shell transistor is a recent advancement of the genuine junctionless concept. The planar version is compatible with FD-SOI technology and attractive for device processing with low thermal budget. An analytical model, which describes the strong impact of the device thickness and doping on the threshold voltage and drive current, is proposed and validated through numerical simulations.

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FD-SOI上无核壳结晶体管的阈值电压和漏极电流模型

核壳晶体管是真正无结概念的最新进展。平面版本与FD-SOI技术兼容，对于低热预算的器件加工具有吸引力。提出了一个解析模型，描述了器件厚度和掺杂对阈值电压和驱动电流的强烈影响，并通过数值模拟进行了验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.