3纳米及以上的硅基纳米片场效应管的迁移率和内在性能

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-06-13 DOI:10.1016/j.sse.2025.109172

Ankit Dixit , Ali Rezaei , Nikolas Xeni , Naveen Kumar , Tapas Dutta , Ismail Topaloglu , Preslav Aleksandrov , Asen Asenov , Vihar Georgiev

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引用次数: 0

摘要

纳米场效应晶体管（nsfet）由于其优于FinFET技术而被引入3nm CMOS技术。在本文中，我们利用我们自己的纳米电子仿真软件（NESS），探讨了不同通道方向下nsfet的载流子迁移率和内在性能。从第一次主要模拟中提取了不同截面和通道方向下的有效质量。利用NESS的有效质量近似非平衡格林函数（NEGF）仿真模块对系统的迁移率和内在性能进行了评估。提出的工作提供了适合3nm和其他技术节点的优化NSFET设计考虑因素的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Mobility and intrinsic performance of silicon-based nanosheet FETs at 3 nm CMOS and beyond

Nanosheet Field-Effect Transistors (NSFETs) have been introduced in the 3 nm CMOS technology due to their advantages over the FinFET technology. In this paper, using our in-house Nano Electronics Simulation Software (NESS), we explore the carrier mobility and the intrinsic performance of NSFETs for different channel orientations. The effective masses for different cross-sections and channel orientations are extracted from the first principal simulations. The mobility and the intrinsic performance are evaluated using the effective mass approximation based non-equilibrium Green’s function (NEGF) simulation module of NESS. The proposed work provides insight into the optimized NSFET design considerations suitable for 3 nm and further technology nodes.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.