Flavio Enrico Bergamaschi , Jefferson Almeida Matos , Jaime Calçade Rodrigues , Giovanni Almeida Matos , Michelly de Souza , Sylvain Barraud , Mikael Cassé , Olivier Faynot , Marcelo Antonio Pavanello
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引用次数: 0
Abstract
This work presents an experimental assessment of self-heating in SOI nanowire MOSFETs in ambient temperatures ranging from 300 K down to 4.2 K using the gate resistance thermometry technique. The temperature increase in the channel region is extracted, and the differential thermal resistance is obtained and plotted as a function of the device temperature. Despite the lower power dissipated by a single nanowire, the operation temperature decrease causes the temperature rise in the channel to increase from around 6 K at room temperature up to 53 K in the cryogenic range. The thermal resistance is considerably lower in nanowires than in wide-channel devices, although both types of transistors present an abrupt increase in the differential thermal resistance at extremely low device temperatures.
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.