Experimental extraction of self-heating in SOI nanowire MOSFETs at cryogenic temperatures

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-06-08 DOI:10.1016/j.sse.2025.109176

Flavio Enrico Bergamaschi , Jefferson Almeida Matos , Jaime Calçade Rodrigues , Giovanni Almeida Matos , Michelly de Souza , Sylvain Barraud , Mikael Cassé , Olivier Faynot , Marcelo Antonio Pavanello

引用次数: 0

Abstract

This work presents an experimental assessment of self-heating in SOI nanowire MOSFETs in ambient temperatures ranging from 300 K down to 4.2 K using the gate resistance thermometry technique. The temperature increase in the channel region is extracted, and the differential thermal resistance is obtained and plotted as a function of the device temperature. Despite the lower power dissipated by a single nanowire, the operation temperature decrease causes the temperature rise in the channel to increase from around 6 K at room temperature up to 53 K in the cryogenic range. The thermal resistance is considerably lower in nanowires than in wide-channel devices, although both types of transistors present an abrupt increase in the differential thermal resistance at extremely low device temperatures.

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低温下SOI纳米线mosfet自热的实验提取

本研究利用栅极电阻测温技术对SOI纳米线mosfet在300 K至4.2 K环境温度下的自热进行了实验评估。提取通道区域的温升，得到差分热阻，并将其绘制为器件温度的函数。尽管单个纳米线的功耗较低，但工作温度的降低导致通道内的温升从室温下的6 K左右增加到低温范围内的53 K。纳米线中的热阻比宽通道器件中的热阻低得多，尽管在极低的器件温度下，两种类型的晶体管的差热阻都会突然增加。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.