Self-aligned nitrogen doping via plasma treatment of NiO/β-Ga2O3 heterojunction diodes

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-06-25 DOI:10.1016/j.sse.2025.109182

Dongbin Kim , Jongsu Baek , Yoonho Choi , Junghun Kim , Hyoung Woo Kim , Byung Jin Cho

{"title":"Self-aligned nitrogen doping via plasma treatment of NiO/β-Ga2O3 heterojunction diodes","authors":"Dongbin Kim , Jongsu Baek , Yoonho Choi , Junghun Kim , Hyoung Woo Kim , Byung Jin Cho","doi":"10.1016/j.sse.2025.109182","DOIUrl":null,"url":null,"abstract":"<div><div>In this work, we demonstrate a novel doping process via self-aligned nitrogen (SA-N2) plasma treatment of the NiO/β-Ga2O3 heterojunction diodes. The SA-N2 plasma-treated heterojunction diodes exhibit improved breakdown voltage from 1080 V to 1731 V while maintaining a high on–off ratio (ION/IOFF) exceeding 1011 and achieving a reduced specific on-resistance (Ron.sp). It is found that the SA-N2 plasma treatment forms a resistive region acting as a shallow guard ring in the β-Ga2O3 around the anode. It is also confirmed that doped N plays the role of both a shallow acceptor and a deep acceptor in NiO and β-Ga2O3, respectively. This process can be easily and cost-effectively applied to the heterojunction structure, contributing to further performance improvement of the wide bandgap power device.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"229 ","pages":"Article 109182"},"PeriodicalIF":1.4000,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110125001273","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

In this work, we demonstrate a novel doping process via self-aligned nitrogen (SA-N₂) plasma treatment of the NiO/β-Ga₂O₃ heterojunction diodes. The SA-N₂ plasma-treated heterojunction diodes exhibit improved breakdown voltage from 1080 V to 1731 V while maintaining a high on–off ratio (I_ON/I_OFF) exceeding 10¹¹ and achieving a reduced specific on-resistance (R_on.sp). It is found that the SA-N₂ plasma treatment forms a resistive region acting as a shallow guard ring in the β-Ga₂O₃ around the anode. It is also confirmed that doped N plays the role of both a shallow acceptor and a deep acceptor in NiO and β-Ga₂O₃, respectively. This process can be easily and cost-effectively applied to the heterojunction structure, contributing to further performance improvement of the wide bandgap power device.

查看原文本刊更多论文

等离子体处理NiO/β-Ga2O3异质结二极管的自对准氮掺杂

在这项工作中，我们展示了一种新的掺杂工艺，通过自取向氮（SA-N2）等离子体处理NiO/β-Ga2O3异质结二极管。SA-N2等离子体处理异质结二极管的击穿电压从1080 V提高到1731 V，同时保持了超过1011的高通断比（ION/IOFF），并实现了降低的比导通电阻（Ron.sp）。发现SA-N2等离子体处理在阳极周围的β-Ga2O3中形成一个电阻区，起到浅保护环的作用。同时也证实了掺杂N在NiO和β-Ga2O3中分别扮演浅受体和深受体的角色。该工艺可以简单且经济地应用于异质结结构，有助于进一步提高宽带隙功率器件的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.