3xVDD-tolerant power-rail ESD clamp circuit for negative mixed-voltage interfaces

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-06-21 DOI:10.1016/j.sse.2025.109185

Hao-En Cheng , Ching-Lin Wu , Chun-Yu Lin

引用次数: 0

Abstract

In this article, a novel power-rail ESD clamp circuit for negative voltage power pins has been proposed and fabricated in a 0.18-μm 1.8-V CMOS process. The proposed circuit, implemented using only 1.8-V nMOS/pMOS devices, achieves a voltage tolerance of 3xVDD (5.4 V), surpassing the 2xVDD-tolerance of most existing designs. Additionally, the circuit demonstrates HBM robustness of over 8 kV and exhibits an exceptionally low leakage current of approximately 0.7nA at room temperature, making it highly suitable for negative voltage environments in biomedical circuits, mixed-voltage applications, and power management systems.

查看原文本刊更多论文

3xdd容限电源轨ESD箝位电路，用于负混合电压接口

本文提出了一种用于负电压电源引脚的新型电源轨ESD箝位电路，并采用0.18 μm 1.8 v CMOS工艺制作。该电路仅使用1.8 V的nMOS/pMOS器件实现，实现了3xVDD （5.4 V）的电压容限，超过了大多数现有设计的2xvdd容限。此外，该电路具有超过8 kV的HBM稳健性，并且在室温下具有约0.7nA的极低漏电流，非常适合生物医学电路、混合电压应用和电源管理系统中的负电压环境。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.