Quantum simulations of MoS2 field effect transistors including contact effects

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-06-23 DOI:10.1016/j.sse.2025.109162

A. Sanchez-Soares , T. Kelly , S.-K. Su , E. Chen , G. Fagas , J.C. Greer

引用次数: 0

Abstract

Two-dimensional (2D) materials have attracted considerable interest for use as channel material in field-effect transistors (FETs) due to their potential for high packing densities and efficient electrostatic control. However, achieving low contact resistances remains a significant challenge for integrated circuit manufacture. This study presents a methodology that enables device simulations explicitly including the effects of contact stacks within a quantum mechanical framework. A means for optimizing device structures including contact effects is demonstrated and validated against experimental and ab initio data for metal–semimetal–semiconductor contacts for optimizing source/drain resistance in monolayer molybdenum disulfide (ML-MoS₂) FETs.

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二硫化钼场效应晶体管的量子模拟，包括接触效应

二维（2D）材料由于具有高封装密度和高效静电控制的潜力，在场效应晶体管（fet）中用作沟道材料引起了相当大的兴趣。然而，实现低接触电阻仍然是集成电路制造的重大挑战。本研究提出了一种方法，使器件模拟明确包括量子力学框架内接触堆栈的影响。为了优化单层二硫化钼（ML-MoS2）场效应管的源极/漏极电阻，针对金属-半金属-半导体触点的实验和从头算数据，展示并验证了一种优化器件结构的方法，包括触点效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.