Low-loss RF substrate compatible with FD-SOI integration using Si+ implantation

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-06-27 DOI:10.1016/j.sse.2025.109189

M. Perrosé , P. Acosta , J. Lugo-Alvarez , A.M. Papon , X. Garros , J.P. Raskin

引用次数: 0

Abstract

The fabrication of localized passivation layers combining Si⁺ ion implantation and thermal annealing was explored. Using metallic coplanar waveguides, key performance metrics such as harmonic distortion and effective resistivity were extracted and analyzed. We demonstrated that the post-implantation thermal annealing temperature had a significant impact on Radio-Frequency performances. The optimum RF performances were obtained at an annealing temperature of 600 °C. This behavior was explained with photoluminescence and TEM characterization that revealed the presence of interstitial clusters. As it can be used locally, this method should enable the co-integration of Fully Depleted Silicon-on-Insulator (FD-SOI) technology with high-quality RF circuitry, leveraging the advantageous HR properties of the base Si substrate.

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使用Si+注入与FD-SOI集成兼容的低损耗射频衬底

研究了硅离子注入与热退火相结合的局部钝化层的制备方法。利用金属共面波导，提取并分析了谐波失真和有效电阻率等关键性能指标。我们证明了植入后的热退火温度对射频性能有显著影响。在600℃的退火温度下获得了最佳的射频性能。这种行为可以用光致发光和透射电镜表征来解释，这些表征显示了间隙团簇的存在。由于它可以局部使用，该方法应该能够将完全耗尽绝缘体上硅（FD-SOI）技术与高质量的射频电路协整，利用基硅衬底的有利HR特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.