通过掺杂和等离子体处理提高p型SnOx薄膜晶体管的迁移率

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-06-25 DOI:10.1016/j.sse.2025.109181

Zhong Pan , Yeojin Jeong , MengMeng Chu , Yunhui Jang , Fucheng Wang , Jingwen Chen , Yong-Sang Kim , Jang-Kun Song , Muhammad Quddamah Khokhar , Junsin Yi

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引用次数: 0

摘要

p型半导体不像n型半导体那么常见，而且它们的性能往往落后于n型半导体，这阻碍了电子设备的效率。在这项研究中，我们展示了一种结合铝（Al）掺杂和氢等离子体处理的两步方法来提高氧化锡薄膜晶体管（TFTs）的性能。Al掺杂显著提高了SnOx薄膜的场效应迁移率，而氢等离子体处理使其向p型电导率过渡。制备的p型掺铝SnOx tft的阈值电压为- 5.2 V，场效应迁移率为1.17 cm2/V·s，离子/离合度为105。这项工作为优化p型SnOx半导体的性能提供了一种新的策略，有助于低功耗互补金属氧化物半导体（CMOS）技术的发展。

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Enhancing the mobility of p-type SnOx thin-film transistors through doping and plasma treatment

P-type semiconductors are less common than their n-type counterparts, and their performance often lags in comparison, which hinders the efficiency of electronic devices. In this study, we demonstrate a two-step approach to enhance the performance of tin oxide based thin-film transistors (TFTs) by combining aluminum (Al) doping and hydrogen plasma treatment. The Al doping significantly enhanced the field-effect mobility of the SnO_x films, while the hydrogen plasma treatment enabled the transition to p-type conductivity. The fabricated p-type Al-doped SnO_x TFTs exhibited a threshold voltage of −5.2 V, a field-effect mobility of 1.17 cm²/V·s, and I_on/I_off of 10⁵. This work provides a novel strategy for optimizing the performance of p-type SnO_x semiconductors, contributing to the development of low-power complementary metal-oxide semiconductor (CMOS) technologies.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.