Solid-state Electronics最新文献_第6页

Selective grain size enlargement in Contact/Via plugs using Nanosecond green laser annealing 利用纳秒绿色激光退火技术有选择地增大接触/Via 塞的晶粒尺寸

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-03-07 DOI: 10.1016/j.sse.2025.109098

Jaejoong Jeong , Youngkeun Park , Hwanuk Guim , Yongku Baek , Heetae Kim , Dongbin Kim , Hui Jae Cho , Su-hyeon Gwon , Min Ju Kim , Byung Jin Cho

{"title":"Selective grain size enlargement in Contact/Via plugs using Nanosecond green laser annealing","authors":"Jaejoong Jeong , Youngkeun Park , Hwanuk Guim , Yongku Baek , Heetae Kim , Dongbin Kim , Hui Jae Cho , Su-hyeon Gwon , Min Ju Kim , Byung Jin Cho","doi":"10.1016/j.sse.2025.109098","DOIUrl":"10.1016/j.sse.2025.109098","url":null,"abstract":"<div><div>The rapid decrease in interconnect Critical Dimensions (CDs) within logic devices and growth in the contact height of 3D memory devices have led to increased contact/via plugs resistance. In this study, we introduce an approach to reduce the resistance of the contact/via plugs by engineering the grain size of the plugs using Nanosecond Green Laser Annealing (NGLA) with a low energy fluence (= 0.1 J/cm<sup>2</sup>). Because of the proximity between adjacent W plugs, diffraction of the laser light can occur which will help the laser energy to be absorbed by the sidewall of the W plugs. In addition, the difference in reflectivity between the plug region and W interconnect lines can cause grain size enlargement to selectively occur in the plug region. The NGLA process increased grain size in the plugs up to 79.9 %, resulting as much as a 26 % reduction in tungsten plug resistance. The standard deviation of the plug resistance was also improved from 14.6 % to 7.9 % after the NGLA process.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"226 ","pages":"Article 109098"},"PeriodicalIF":1.4,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143620325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low-frequency noise in polysilicon Source-Gated Thin-Film transistors 多晶硅源门控薄膜晶体管中的低频噪声

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-03-03 DOI: 10.1016/j.sse.2025.109099

Q. Chen , L.Van Brandt , V. Kilchytska , E. Bestelink , R.A. Sporea , D. Flandre

引用次数: 0

High-endurance bulk CMOS one-transistor cryo-memory 高耐久体积CMOS单晶体管低温存储器

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-02-28 DOI: 10.1016/j.sse.2025.109097

A. Zaslavsky , P.R. Shrestha , V.Ortiz Jimenez , J.P. Campbell , C.A. Richter

引用次数: 0

Investigation of reconfigurable logic gate using integrated amorphous InGaZnO ReRAM and thin-film transistor 集成非晶InGaZnO ReRAM和薄膜晶体管的可重构逻辑门研究

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-02-19 DOI: 10.1016/j.sse.2025.109084

Jung Rae Cho , Jingyu Park , Seung Joo Myoung , Tae Jun Yang , Changwook Kim , Jong-Ho Bae , Sung-Jin Choi , Dong Myong Kim , Ickhyun Song , Dae Hwan Kim

{"title":"Investigation of reconfigurable logic gate using integrated amorphous InGaZnO ReRAM and thin-film transistor","authors":"Jung Rae Cho , Jingyu Park , Seung Joo Myoung , Tae Jun Yang , Changwook Kim , Jong-Ho Bae , Sung-Jin Choi , Dong Myong Kim , Ickhyun Song , Dae Hwan Kim","doi":"10.1016/j.sse.2025.109084","DOIUrl":"10.1016/j.sse.2025.109084","url":null,"abstract":"<div><div>This paper proposes a new reconfigurable logic circuits based on InGaZnO resistive random-access memory (ReRAM) and presents a comprehensive investigation of their electrical characteristics and logic operation. Two fundamental equations that govern the transport mechanism of oxygen ions were utilized to model the formation of lateral and vertical conducting filaments in ReRAM devices in a circuit simulation environment. Based on the device models, the electrical behavior of ReRAM was examined and verified, using circuit simulators. Experimental results from dc current–voltage and pulse measurements of ReRAM and thin-film transistors (TFTs) demonstrate their electrical switching characteristics. The paper analyzes and validates the operation of two ReRAM-based logic configurations: 1 T-1 M (one transistor and one ReRAM cell) and 2 T-2 M−INV (inverter). A detailed analysis were conducted to compare the proposed ReRAM-based logic with the conventional CMOS counterparts, revealing favorable advantages in reducing transistor counts and die areas. The 1 T-1 M and 2 T-2 M−INV exhibit reconfigurable logic operations under different resistive states of ReRAM cells. Additionally, the investigations of short-circuit current profiles shows the superior performance of ReRAM-based logic gates to the CMOS counterpart in terms of power consumption. Overall, this study investigates the feasibility of ReRAM-based reconfigurable logic circuits for future low-power and high-performance computing applications.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"226 ","pages":"Article 109084"},"PeriodicalIF":1.4,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143487699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comparison of radiation effects of LM and UMM structure GaAs triple-junction solar cells under 1 MeV neutron irradiation LM和UMM结构GaAs三结太阳电池在1mev中子辐照下的辐射效应比较

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-02-14 DOI: 10.1016/j.sse.2025.109087

Minqiang Liu , Xuqiang Liu , Guoping Xiao , Bobo Wang , Sanyong Zou , Le Zhong , Xianguo Xu , Chao Zeng , Shuyi Zhang , Guanghai Tang , Fang Deng , Abuduwayiti Aierken

{"title":"Comparison of radiation effects of LM and UMM structure GaAs triple-junction solar cells under 1 MeV neutron irradiation","authors":"Minqiang Liu , Xuqiang Liu , Guoping Xiao , Bobo Wang , Sanyong Zou , Le Zhong , Xianguo Xu , Chao Zeng , Shuyi Zhang , Guanghai Tang , Fang Deng , Abuduwayiti Aierken","doi":"10.1016/j.sse.2025.109087","DOIUrl":"10.1016/j.sse.2025.109087","url":null,"abstract":"<div><div>The output performances of lattice-matched (LM) and upright metamorphic (UMM) GaAs triple-junction solar cells under 1 MeV neutron irradiation were studied. The results show that the electrical performance, including open-circuit voltage, short-circuit current, maximum output power and fill factor of the solar cells were degraded seriously with the increase of neutron irradiation fluence. Meanwhile, the series resistance and the shunt resistance of solar cells are increased and decreased, respectively, when the neutron irradiation fluence increased. The degradation of maximum output power in LM and UMM GaAs cells is about the same level of 72.9 % and 72.3 % of its initial values, respectively, when the irradiation fluence is reached 6 × 10<sup>12</sup> n/cm<sup>2</sup>. By comparing the integrated current densities, it was found out that the current-limiting subcell in LM cells s always GaAs middle cell, and in the UMM cell, the current limiting unit is changed from GaInP top subcell to GaInAs middle subcell after high fluence neutron irradiation.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"226 ","pages":"Article 109087"},"PeriodicalIF":1.4,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143437754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of temperature inhomogeneity and trap charge on current imbalance of SiC MOSFETs 温度非均匀性和陷阱电荷对SiC mosfet电流不平衡的影响

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-02-12 DOI: 10.1016/j.sse.2025.109085

Chunsheng Guo, Jiapeng Li, Yamin Zhang, Hui Zhu, Meng Zhang, Shiwei Feng

引用次数: 0

Improvement of charge storage and retention characteristics of HfO2 Charge-Trapping layer in NVM based on InGaZnO channels 基于InGaZnO通道的NVM中HfO2电荷捕获层电荷存储和保留特性的改进

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-02-12 DOI: 10.1016/j.sse.2025.109077

Jingwen Chen , Fucheng Wang , Zhong Pan , Jang-Kun Song , Yong-Sang Kim , Muhammad Quddamah Khokhar , Junsin Yi

{"title":"Improvement of charge storage and retention characteristics of HfO2 Charge-Trapping layer in NVM based on InGaZnO channels","authors":"Jingwen Chen , Fucheng Wang , Zhong Pan , Jang-Kun Song , Yong-Sang Kim , Muhammad Quddamah Khokhar , Junsin Yi","doi":"10.1016/j.sse.2025.109077","DOIUrl":"10.1016/j.sse.2025.109077","url":null,"abstract":"<div><div>In recent years, with the widespread application of semiconductor thin-film memory devices, the focus of research has gradually shifted to how to fabricate memory with larger storage windows and longer retention times. This study employs the rapid thermal annealing (RTA) method to conduct multiple annealing treatments on charge trapping memory (CTM) devices that use HfO<sub>2</sub> as the charge trapping layer, the leakage current of the device is reduced, and the negative deviation of threshold voltage is improved. During the experiments, the charge trapping layer (CTL) and tunneling layer (TL) of the devices were deposited, and a 50 nm IGZO thin film was deposited as the channel layer. The study investigates the memory performance of TFT-NVM (thin film transistor non-volatile memory) after RTA under different conditions. The results showed that the TFT-NVM with the Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub>/SiO<sub>2</sub> structure has a large memory window (1.4 V) and good charge retention (>71.39 %) before O<sub>2</sub> annealing treatment. This provides a feasible approach for future research on TFT-NVM.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"226 ","pages":"Article 109077"},"PeriodicalIF":1.4,"publicationDate":"2025-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143437724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Well-balanced 4H-SiC JBSFET: Integrating JBS diode and VDMOSFET characteristics for reliable 1700V applications 平衡良好的4H-SiC jbfet：集成了JBS二极管和VDMOSFET特性，可实现可靠的1700V应用

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-02-12 DOI: 10.1016/j.sse.2025.109083

Chia-Lung Hung , Yi-Kai Hsiao , Jing-Neng Yao , Hao-Chung Kuo

{"title":"Well-balanced 4H-SiC JBSFET: Integrating JBS diode and VDMOSFET characteristics for reliable 1700V applications","authors":"Chia-Lung Hung , Yi-Kai Hsiao , Jing-Neng Yao , Hao-Chung Kuo","doi":"10.1016/j.sse.2025.109083","DOIUrl":"10.1016/j.sse.2025.109083","url":null,"abstract":"<div><div>SiC power devices are suitable for high voltage and temperature applications due to their higher breakdown electrical field and thermal conductivity. Recently, many SiC SBDs and VDMOSFETs have been commercially produced. In comparison to Si-IGBT devices, the inherent body diode of SiC VDMOSFETs can also be used as the freewheeling diode in inductive switching power circuits, eliminating the need for an additional packaged diode. This can save costs and reduce the footprint of the total package. However, the bipolar carrier conduction and minority carrier injection mechanism on the body diode of SiC VDMOSFETs result in a higher turn-on knee voltage and longer reverse recovery time when used as a freewheeling diode. In fact, SiC SBDs are often utilized to replace the body diode, aiming to enhance the knee voltage and reverse recovery speed. To harness both the benefits of SiC VDMOSFETs and SBDs, it is worthwhile to integrate these two types of power devices into a single monolithic chip. In this study, we fabricated integrated JBS diodes into VDMOSFETs (JBSFETs) targeting 1700 V applications. Well-behaved JBSFETs with a threshold voltage (V<sub>th</sub>) of 1.9 V, specific on-resistance (R<sub>on,sp</sub>) of 5.2 mΩ-cm<sup>2</sup>, and acceptable blocking voltage (BV) of 2373 V have been achieved. The temperature dependence of the JBSFET device characteristics was also investigated. These results represent significant progress in implementing high-performance JBSFETs in power electronics.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"226 ","pages":"Article 109083"},"PeriodicalIF":1.4,"publicationDate":"2025-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143422481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impacts of trench angle on the performance of trench super-junction vertical double-diffused metal-oxide-semiconductor 沟槽角对沟槽超结垂直双扩散金属氧化物半导体性能的影响

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-02-11 DOI: 10.1016/j.sse.2025.109086

Yongjia Li , Di Gui , Feilu Chen , Wangran Wu , Weifeng Sun

引用次数: 0

Degradation mechanisms for static and dynamic characteristics in 1.2 kV 4H-SiC MOSFETs under repetitive short-circuit tests 1.2 kV 4H-SiC mosfet在重复短路试验下的静态和动态特性退化机制

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-02-11 DOI: 10.1016/j.sse.2025.109082

Ying Ji , Linna Zhao , Shilong Yang , Cunli Lu , Xiaofeng Gu , Wai Tung Ng

{"title":"Degradation mechanisms for static and dynamic characteristics in 1.2 kV 4H-SiC MOSFETs under repetitive short-circuit tests","authors":"Ying Ji , Linna Zhao , Shilong Yang , Cunli Lu , Xiaofeng Gu , Wai Tung Ng","doi":"10.1016/j.sse.2025.109082","DOIUrl":"10.1016/j.sse.2025.109082","url":null,"abstract":"<div><div>In this paper, repetitive short-circuit (RSC) tests are conducted at off-state and on-state gate-source voltages (<em>V</em><sub>GS,OFF</sub>/<em>V</em><sub>GS,ON</sub>) of −4/+15 V, −4/+19 V and 0/+19 V, respectively, to investigate the degradation behaviors of 1.2 kV 4H-SiC MOSFETs. Combining experimental and simulation results, it is found that trapped electrons or holes in the gate oxide during the avalanche process are the main degradation mechanism for the static parameters. This results in increases of 0.4 V and 3.0 mΩ in <em>V</em><sub>TH</sub> and <em>R</em><sub>DS,ON</sub>, respectively, at <em>V</em><sub>GS,OFF</sub>/<em>V</em><sub>GS,ON</sub> = −4/+19 V; 0.45 V and 4.1 mΩ at <em>V</em><sub>GS,OFF</sub>/<em>V</em><sub>GS,ON</sub> = 0/+19 V; and decreases of 0.69 V and 3.2 mΩ at <em>V</em><sub>GS,OFF</sub>/<em>V</em><sub>GS,ON</sub> = −4/+15 V after 240 short-circuit (SC) tests. The dynamic characteristics of the device under test, including <em>C</em><sub>GS</sub>, <em>C</em><sub>DS</sub>, <em>C</em><sub>GD</sub> also degrade. The trapped holes in the gate oxide above the JFET region lead to a thinner depletion region and an obvious increase in <em>C</em><sub>GD</sub>. Furthermore, the gate leakage current under high reverse gate bias is affected by the RSC tests, primarily attributed to trapped electrons hopping to the poly-Si/SiO<sub>2</sub> interface via defect states.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"226 ","pages":"Article 109082"},"PeriodicalIF":1.4,"publicationDate":"2025-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143422366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0