开尔文交流伪mos方法中沟道导通对电容特性的影响

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-07-19 DOI:10.1016/j.sse.2025.109193

Kyohei Ueda, Shingo Sato

引用次数: 0

摘要

本文介绍了一种新开发的用于开尔文交流电（AC）伪金属氧化物半导体（MOS）法分析的缓冲电路。利用该电路系统地研究了通道导通对电容特性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influence of channel conduction on capacitance characteristic in the Kelvin AC pseudo-MOS method

In this letter, a newly developed buffer circuit designed for analysis using the Kelvin alternating current (AC) pseudo-metal–oxide–semiconductor (MOS) method is presented. This circuit was used to investigate systematically the influence of channel conduction on capacitance characteristics.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.