{"title":"量子点敏化太阳能电池用Cu2ZnSnS4-Cu9S5异质结对电极","authors":"Huanying Yang , Shixin Chen","doi":"10.1016/j.sse.2025.109190","DOIUrl":null,"url":null,"abstract":"<div><div>Counter electrodes (CEs) are key components for collecting external circuit electrons and catalyzing reduced electrolytes in quantum dot-sensitized solar cells (QDSSCs). Hence, inquiry into heterojunction CEs with gradient potential energy can positively impact the charge transport of QDSSCs. In this work, a Cu<sub>2</sub>ZnSnS<sub>4</sub>-Cu<sub>9</sub>S<sub>5</sub> heterojunction was designed as the CE for QDSSCs with CdS/CdSe quantum dots, and a Cu<sub>9</sub>S<sub>5</sub> CE was fabricated for comparison. Compared to the Cu<sub>9</sub>S<sub>5</sub> CE, QDSSCs based on the Cu<sub>2</sub>ZnSnS<sub>4</sub>-Cu<sub>9</sub>S<sub>5</sub> CE exhibited a significantly improved short-circuit current density (13.71 mA/cm<sup>2</sup>) and power conversion efficiency (3.27 %). The electrochemical impedance spectroscopy and Tafel polarization results revealed that the device containing the Cu<sub>2</sub>ZnSnS<sub>4</sub>-Cu<sub>9</sub>S<sub>5</sub> CE had a lower series resistance of 7.23 Ω/cm<sup>2</sup> and higher limiting current density values. This was attributed to the high catalytic activity and superior charge transport properties of the Cu<sub>2</sub>ZnSnS<sub>4</sub>-Cu<sub>9</sub>S<sub>5</sub> heterojunction. Therefore, this work demonstrates that heterojunction CEs hold great potential in the field of optoelectronic devices.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"229 ","pages":"Article 109190"},"PeriodicalIF":1.4000,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Cu2ZnSnS4-Cu9S5 heterojunction counter electrode for quantum dot-sensitized solar cells\",\"authors\":\"Huanying Yang , Shixin Chen\",\"doi\":\"10.1016/j.sse.2025.109190\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Counter electrodes (CEs) are key components for collecting external circuit electrons and catalyzing reduced electrolytes in quantum dot-sensitized solar cells (QDSSCs). Hence, inquiry into heterojunction CEs with gradient potential energy can positively impact the charge transport of QDSSCs. In this work, a Cu<sub>2</sub>ZnSnS<sub>4</sub>-Cu<sub>9</sub>S<sub>5</sub> heterojunction was designed as the CE for QDSSCs with CdS/CdSe quantum dots, and a Cu<sub>9</sub>S<sub>5</sub> CE was fabricated for comparison. Compared to the Cu<sub>9</sub>S<sub>5</sub> CE, QDSSCs based on the Cu<sub>2</sub>ZnSnS<sub>4</sub>-Cu<sub>9</sub>S<sub>5</sub> CE exhibited a significantly improved short-circuit current density (13.71 mA/cm<sup>2</sup>) and power conversion efficiency (3.27 %). The electrochemical impedance spectroscopy and Tafel polarization results revealed that the device containing the Cu<sub>2</sub>ZnSnS<sub>4</sub>-Cu<sub>9</sub>S<sub>5</sub> CE had a lower series resistance of 7.23 Ω/cm<sup>2</sup> and higher limiting current density values. This was attributed to the high catalytic activity and superior charge transport properties of the Cu<sub>2</sub>ZnSnS<sub>4</sub>-Cu<sub>9</sub>S<sub>5</sub> heterojunction. Therefore, this work demonstrates that heterojunction CEs hold great potential in the field of optoelectronic devices.</div></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"229 \",\"pages\":\"Article 109190\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2025-07-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110125001352\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110125001352","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Cu2ZnSnS4-Cu9S5 heterojunction counter electrode for quantum dot-sensitized solar cells
Counter electrodes (CEs) are key components for collecting external circuit electrons and catalyzing reduced electrolytes in quantum dot-sensitized solar cells (QDSSCs). Hence, inquiry into heterojunction CEs with gradient potential energy can positively impact the charge transport of QDSSCs. In this work, a Cu2ZnSnS4-Cu9S5 heterojunction was designed as the CE for QDSSCs with CdS/CdSe quantum dots, and a Cu9S5 CE was fabricated for comparison. Compared to the Cu9S5 CE, QDSSCs based on the Cu2ZnSnS4-Cu9S5 CE exhibited a significantly improved short-circuit current density (13.71 mA/cm2) and power conversion efficiency (3.27 %). The electrochemical impedance spectroscopy and Tafel polarization results revealed that the device containing the Cu2ZnSnS4-Cu9S5 CE had a lower series resistance of 7.23 Ω/cm2 and higher limiting current density values. This was attributed to the high catalytic activity and superior charge transport properties of the Cu2ZnSnS4-Cu9S5 heterojunction. Therefore, this work demonstrates that heterojunction CEs hold great potential in the field of optoelectronic devices.
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.