等离子体处理NiO/β-Ga2O3异质结二极管的自对准氮掺杂

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-06-25 DOI:10.1016/j.sse.2025.109182

Dongbin Kim , Jongsu Baek , Yoonho Choi , Junghun Kim , Hyoung Woo Kim , Byung Jin Cho

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引用次数: 0

摘要

在这项工作中，我们展示了一种新的掺杂工艺，通过自取向氮（SA-N2）等离子体处理NiO/β-Ga2O3异质结二极管。SA-N2等离子体处理异质结二极管的击穿电压从1080 V提高到1731 V，同时保持了超过1011的高通断比（ION/IOFF），并实现了降低的比导通电阻（Ron.sp）。发现SA-N2等离子体处理在阳极周围的β-Ga2O3中形成一个电阻区，起到浅保护环的作用。同时也证实了掺杂N在NiO和β-Ga2O3中分别扮演浅受体和深受体的角色。该工艺可以简单且经济地应用于异质结结构，有助于进一步提高宽带隙功率器件的性能。

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Self-aligned nitrogen doping via plasma treatment of NiO/β-Ga2O3 heterojunction diodes

In this work, we demonstrate a novel doping process via self-aligned nitrogen (SA-N₂) plasma treatment of the NiO/β-Ga₂O₃ heterojunction diodes. The SA-N₂ plasma-treated heterojunction diodes exhibit improved breakdown voltage from 1080 V to 1731 V while maintaining a high on–off ratio (I_ON/I_OFF) exceeding 10¹¹ and achieving a reduced specific on-resistance (R_on.sp). It is found that the SA-N₂ plasma treatment forms a resistive region acting as a shallow guard ring in the β-Ga₂O₃ around the anode. It is also confirmed that doped N plays the role of both a shallow acceptor and a deep acceptor in NiO and β-Ga₂O₃, respectively. This process can be easily and cost-effectively applied to the heterojunction structure, contributing to further performance improvement of the wide bandgap power device.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.