Dongbin Kim , Jongsu Baek , Yoonho Choi , Junghun Kim , Hyoung Woo Kim , Byung Jin Cho
{"title":"等离子体处理NiO/β-Ga2O3异质结二极管的自对准氮掺杂","authors":"Dongbin Kim , Jongsu Baek , Yoonho Choi , Junghun Kim , Hyoung Woo Kim , Byung Jin Cho","doi":"10.1016/j.sse.2025.109182","DOIUrl":null,"url":null,"abstract":"<div><div>In this work, we demonstrate a novel doping process via self-aligned nitrogen (SA-N<sub>2</sub>) plasma treatment of the NiO/β-Ga<sub>2</sub>O<sub>3</sub> heterojunction diodes. The SA-N<sub>2</sub> plasma-treated heterojunction diodes exhibit improved breakdown voltage from 1080 V to 1731 V while maintaining a high on–off ratio (<em>I<sub>ON</sub>/I<sub>OFF</sub></em>) exceeding 10<sup>11</sup> and achieving a reduced specific on-resistance (<em>R<sub>on.sp</sub></em>). It is found that the SA-N<sub>2</sub> plasma treatment forms a resistive region acting as a shallow guard ring in the β-Ga<sub>2</sub>O<sub>3</sub> around the anode. It is also confirmed that doped N plays the role of both a shallow acceptor and a deep acceptor in NiO and β-Ga<sub>2</sub>O<sub>3</sub>, respectively. This process can be easily and cost-effectively applied to the heterojunction structure, contributing to further performance improvement of the wide bandgap power device.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"229 ","pages":"Article 109182"},"PeriodicalIF":1.4000,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Self-aligned nitrogen doping via plasma treatment of NiO/β-Ga2O3 heterojunction diodes\",\"authors\":\"Dongbin Kim , Jongsu Baek , Yoonho Choi , Junghun Kim , Hyoung Woo Kim , Byung Jin Cho\",\"doi\":\"10.1016/j.sse.2025.109182\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this work, we demonstrate a novel doping process via self-aligned nitrogen (SA-N<sub>2</sub>) plasma treatment of the NiO/β-Ga<sub>2</sub>O<sub>3</sub> heterojunction diodes. The SA-N<sub>2</sub> plasma-treated heterojunction diodes exhibit improved breakdown voltage from 1080 V to 1731 V while maintaining a high on–off ratio (<em>I<sub>ON</sub>/I<sub>OFF</sub></em>) exceeding 10<sup>11</sup> and achieving a reduced specific on-resistance (<em>R<sub>on.sp</sub></em>). It is found that the SA-N<sub>2</sub> plasma treatment forms a resistive region acting as a shallow guard ring in the β-Ga<sub>2</sub>O<sub>3</sub> around the anode. It is also confirmed that doped N plays the role of both a shallow acceptor and a deep acceptor in NiO and β-Ga<sub>2</sub>O<sub>3</sub>, respectively. This process can be easily and cost-effectively applied to the heterojunction structure, contributing to further performance improvement of the wide bandgap power device.</div></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"229 \",\"pages\":\"Article 109182\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2025-06-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110125001273\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110125001273","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Self-aligned nitrogen doping via plasma treatment of NiO/β-Ga2O3 heterojunction diodes
In this work, we demonstrate a novel doping process via self-aligned nitrogen (SA-N2) plasma treatment of the NiO/β-Ga2O3 heterojunction diodes. The SA-N2 plasma-treated heterojunction diodes exhibit improved breakdown voltage from 1080 V to 1731 V while maintaining a high on–off ratio (ION/IOFF) exceeding 1011 and achieving a reduced specific on-resistance (Ron.sp). It is found that the SA-N2 plasma treatment forms a resistive region acting as a shallow guard ring in the β-Ga2O3 around the anode. It is also confirmed that doped N plays the role of both a shallow acceptor and a deep acceptor in NiO and β-Ga2O3, respectively. This process can be easily and cost-effectively applied to the heterojunction structure, contributing to further performance improvement of the wide bandgap power device.
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.