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2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits最新文献

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The study of nanosized zeolite films in sensor for DMMP gas detection 纳米沸石膜用于DMMP气体检测传感器的研究
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232586
Haifen Xie, Qiong Hu, Jia Zhou, Yipin Huang
{"title":"The study of nanosized zeolite films in sensor for DMMP gas detection","authors":"Haifen Xie, Qiong Hu, Jia Zhou, Yipin Huang","doi":"10.1109/IPFA.2009.5232586","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232586","url":null,"abstract":"Nanosized ZSM-5 and Ag+ modified nanosized ZSM-5 as sensitive films to detect the nerve agent simulant dimethylmethylphosphonate(DMMP) at low concentration has been reported [1]. In order to find the relationship between pore size and sensitivity, larger pore size β zeolite film was also used to detect the DMMP gas. Different types of zeolite films with specific sensitivity towards low concentration of acetone and ethanol gases were discussed. This observation demonstrates that sensitivity depended not only on the size of the molecules but also morphology of zeolite grains. The Ag+ modified nanosized ZSM-5 film has a high sorption capacity of acetone gas, while nanosized ZSM-5 has higher sorption capacity of DMMP gas. β zeolite film had the worst absorption of the DMMP gas. The absorption and desorption condition of nanosized ZSM-5 film was also discussed in this paper. Based on these results it was concluded that nanosized ZSM-5 films could be used as effective DMMP gas sensor materials.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"446 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123628832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling of radiation-induced displacement damage in silicon solar cells: Frenkel defect 硅太阳能电池辐射诱发位移损伤的建模:Frenkel缺陷
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232562
T. Maiti, C. Maiti
{"title":"Modeling of radiation-induced displacement damage in silicon solar cells: Frenkel defect","authors":"T. Maiti, C. Maiti","doi":"10.1109/IPFA.2009.5232562","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232562","url":null,"abstract":"Displacement damage mechanisms due to radiation have been investigated and interpreted via abinitio calculation. Effect of radiation-induced Frenkel defect has been incorporated in device modeling. Current voltage characteristics are studied to establish beginning of life (BOL) parameters of the solar cells and the changes that occur due to irradiation (EOL).","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123333499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The impact on electric characteristics of solar modules by its internal defects 太阳能组件内部缺陷对其电气特性的影响
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232550
W. Yongqing, Cai Ailing, Sun Rong-xia, Guo Yukun
{"title":"The impact on electric characteristics of solar modules by its internal defects","authors":"W. Yongqing, Cai Ailing, Sun Rong-xia, Guo Yukun","doi":"10.1109/IPFA.2009.5232550","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232550","url":null,"abstract":"Combined with the corresponding infrared images and experimental verification, the paper analyzed impacts on the electrical property of modules caused by the internal defects aiming at the output characteristic curves measured by the Solar Simulator.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"32 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120844976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The impact on testing precision of solar modules by the correction parameter of solar simulator 太阳模拟器校正参数对太阳能组件测试精度的影响
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232603
W. Yongqing, Cai Ailing, Sun Rong-xia
{"title":"The impact on testing precision of solar modules by the correction parameter of solar simulator","authors":"W. Yongqing, Cai Ailing, Sun Rong-xia","doi":"10.1109/IPFA.2009.5232603","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232603","url":null,"abstract":"When the testing temperature has a deviation to 25°C and an unsuitable setting of the correction parameter, the result of the solar simulator shows an error value which has a large distance with the correct one. The paper tries to prove that the precision of solar simulator has great relationship not only with the temperature coefficients but also the curve correction factor. Finally, the correct setting value is obtained through research and the error of the research result is less than 1% of the value with in the temperature of 15–37°CV.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128337011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Paramagnetic defects and charge trapping in TaYOx gate dielectrics on strained-Si 应变si上TaYOx栅介质的顺磁缺陷和电荷俘获
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232718
B. Majhi, C. Mahata, M. Bera, M. K. Hota, S. Mallik, T. Das, C. Maiti
{"title":"Paramagnetic defects and charge trapping in TaYOx gate dielectrics on strained-Si","authors":"B. Majhi, C. Mahata, M. Bera, M. K. Hota, S. Mallik, T. Das, C. Maiti","doi":"10.1109/IPFA.2009.5232718","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232718","url":null,"abstract":"Charge trapping kinetics and chemical nature of defects present in Al/TaYOx/strained-Si/Si0.8Ge0.2 MIS capacitors have been studied using internal photoemission and magnetic resonance. Reliability characteristics have been studied using CVS and CCS techniques. Results of electron paramagnetic resonance (EPR) and internal photoemission (IPE) studies on the charge trapping behavior are reported.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"145 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133988780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Comprehensive study of reliability improvement for 65nm Cu/Low-k process 提高65nm Cu/Low-k工艺可靠性的综合研究
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232554
C. Liao, Z. Gan, Yuehua Wu, K. Zheng, R. Guo, L. F. Zhang, J. Ning
{"title":"A Comprehensive study of reliability improvement for 65nm Cu/Low-k process","authors":"C. Liao, Z. Gan, Yuehua Wu, K. Zheng, R. Guo, L. F. Zhang, J. Ning","doi":"10.1109/IPFA.2009.5232554","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232554","url":null,"abstract":"BEOL reliability becomes increasing important issues as device dimensions are scaled for the Cu/low-k interconnects, including electromigration (EM), stress migration (SM), inter-line leakage, breakdown and time-dependent dielectric breakdown (TDDB) characteristics of low-k dielectrics, and plasma-process induced damage (P2ID). This paper gives a summary of the BEOL reliability improvement for the 65nm Cu/low-k process. The efforts for the reliability improvement include process control for metal dimension uniformity, the interface integrity between Cu and cap layer (SiCN), and via bottom integrity; and plasma control for the pre-metal dielectric (PMD) deposition, pre-clean before Cu barrier deposition and passivation etching for Al pad. The corresponding physical mechanisms for the respective improvements will also be discussed.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"355 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134412065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Investigation of the influence of substrate temperature on the thermal resistance and square stability of amorphous titanium-vanadium oxide films 衬底温度对非晶态氧化钛-钒薄膜热阻和方稳定性影响的研究
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232636
Y. Ju, Z.M. Wu, Z. Luo, X. Dong, J. Jiang, L. Li, Y. Jiang
{"title":"Investigation of the influence of substrate temperature on the thermal resistance and square stability of amorphous titanium-vanadium oxide films","authors":"Y. Ju, Z.M. Wu, Z. Luo, X. Dong, J. Jiang, L. Li, Y. Jiang","doi":"10.1109/IPFA.2009.5232636","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232636","url":null,"abstract":"Stability of materials is of great technical importance for materials to be applied technologically. In this paper, a novel material-amorphous composite films of titanium and vanadium oxides films, which may have a very promising industrial application, were obtained by reactive dc magnetron co-sputtering deposition. The dependence of thermal resistance and square resistance stability of the samples on the different substrate temperature during the co-sputtering deposition was investigated. Furthermore, analysis of square resistance and its stability of the samples demonstrated that the substrate temperature during the deposition played a very important role on the electrical properties and square resistance stability of the films. The width of the thermal resistance hysteresis loop was also observed to be varied with the substrate temperature.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133027078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Failure analysis of Through-Silicon-Vias Aided by high-speed FIB silicon removal 高速FIB除硅辅助下的硅通孔失效分析
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232689
Pascal Gounet, M. Mercier, D. Serre, C. Rue
{"title":"Failure analysis of Through-Silicon-Vias Aided by high-speed FIB silicon removal","authors":"Pascal Gounet, M. Mercier, D. Serre, C. Rue","doi":"10.1109/IPFA.2009.5232689","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232689","url":null,"abstract":"High-speed FIB silicon trenching is used to remove substrate materials around large structures on semiconductor devices. After removing the surrounding substrate material, it is possible to perform FIB cross-sectional analyses on structures that would normally be too large for such an approach. Through-Silicon-Vias (TSVs) are examined in detail, but other applications are also briefly described.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"162 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134549117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transient response of bipolar transistor under intense electromagnetic pulse on collector 集电极强电磁脉冲作用下双极晶体管的瞬态响应
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232611
Xiaowen Xi, C. Chai, Xingrong Ren, Yintang Yang, Bing Zhang
{"title":"Transient response of bipolar transistor under intense electromagnetic pulse on collector","authors":"Xiaowen Xi, C. Chai, Xingrong Ren, Yintang Yang, Bing Zhang","doi":"10.1109/IPFA.2009.5232611","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232611","url":null,"abstract":"A study on the injection-induced damage to bipolar transistor (BJT) under the intense electromagnetic pulse (EMP) is carried out in this paper. The distribution and variation of the electric field, current density and temperature are obtained and analyzed with the device simulator Medici employed. Simulation results show that when the applied voltage reaches a certain value, there is a conducting tunnel appearing between the collector and the emitter following the avalanche breakdown. Considering both values of the electric field and the current density, it is found that the burnout appears in the N-N+ interface firstly.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133721635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
In-suit observations of mechanical stress in Al interconnect line under thermal/electrical conditions 热/电条件下铝互连线机械应力的原位观察
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232722
Zhiguo Li, Yuehua Wu, H. Fu, Chunsheng Guo, Yuan Ji, Zhimin Liu
{"title":"In-suit observations of mechanical stress in Al interconnect line under thermal/electrical conditions","authors":"Zhiguo Li, Yuehua Wu, H. Fu, Chunsheng Guo, Yuan Ji, Zhimin Liu","doi":"10.1109/IPFA.2009.5232722","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232722","url":null,"abstract":"In-situ observation of stress in Al interconnects under electromigration and thermal effect by using the synchrotron radiation x-ray diffraction. The test temperature was controlled by changing the current density of W (self-heating structure). The EM-induced stress was also investigated with current densities from 3×105A/cm2 to 4×106A/cm2. The conclusion agreed well with the simulation results.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115010776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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