Failure analysis of Through-Silicon-Vias Aided by high-speed FIB silicon removal

Abstract

High-speed FIB silicon trenching is used to remove substrate materials around large structures on semiconductor devices. After removing the surrounding substrate material, it is possible to perform FIB cross-sectional analyses on structures that would normally be too large for such an approach. Through-Silicon-Vias (TSVs) are examined in detail, but other applications are also briefly described.