Zhiguo Li, Yuehua Wu, H. Fu, Chunsheng Guo, Yuan Ji, Zhimin Liu
{"title":"热/电条件下铝互连线机械应力的原位观察","authors":"Zhiguo Li, Yuehua Wu, H. Fu, Chunsheng Guo, Yuan Ji, Zhimin Liu","doi":"10.1109/IPFA.2009.5232722","DOIUrl":null,"url":null,"abstract":"In-situ observation of stress in Al interconnects under electromigration and thermal effect by using the synchrotron radiation x-ray diffraction. The test temperature was controlled by changing the current density of W (self-heating structure). The EM-induced stress was also investigated with current densities from 3×105A/cm2 to 4×106A/cm2. The conclusion agreed well with the simulation results.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"In-suit observations of mechanical stress in Al interconnect line under thermal/electrical conditions\",\"authors\":\"Zhiguo Li, Yuehua Wu, H. Fu, Chunsheng Guo, Yuan Ji, Zhimin Liu\",\"doi\":\"10.1109/IPFA.2009.5232722\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In-situ observation of stress in Al interconnects under electromigration and thermal effect by using the synchrotron radiation x-ray diffraction. The test temperature was controlled by changing the current density of W (self-heating structure). The EM-induced stress was also investigated with current densities from 3×105A/cm2 to 4×106A/cm2. The conclusion agreed well with the simulation results.\",\"PeriodicalId\":210619,\"journal\":{\"name\":\"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2009.5232722\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2009.5232722","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In-suit observations of mechanical stress in Al interconnect line under thermal/electrical conditions
In-situ observation of stress in Al interconnects under electromigration and thermal effect by using the synchrotron radiation x-ray diffraction. The test temperature was controlled by changing the current density of W (self-heating structure). The EM-induced stress was also investigated with current densities from 3×105A/cm2 to 4×106A/cm2. The conclusion agreed well with the simulation results.