2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits最新文献_第10页

Thermal analysis of DC/DC module DC/DC模块热分析

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232619

Wang Yuanchun, Man Weidong, Lv Changzhi, L. Zhiguo, Guo Chunsheng, Li Fei

引用次数: 3

Advanced block oxide MOSFETs for 25 nm technology node 先进的块氧化mosfet为25纳米技术节点

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232673

Chih-Hung Sun, Jyi-Tsong Lin, Y. Eng, Tzu-Feng Chang, Po-Hsieh Lin, Hsuan-Hsu Chen, C. Kuo, Hsien-Nan Chiu

引用次数: 3

Reliability of high power QCW cm-bar arrays 大功率QCW毫米棒阵列的可靠性

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232648

L. Guoguang, Huang Yun, En Yunfei, Yang Shaohua, Lei Zhifeng

引用次数: 0

Physical and structural properties of HfO2/SiO2 gate stack high-k dielectrics deposited by atomic layer deposition 原子层沉积HfO2/SiO2栅极堆高k介电材料的物理和结构特性

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232575

Z. Tao, Hong-Xia Liu, Qianwei Kuang, Nai-Qiong Cai, H. Yue, Zhao Aaron, Tallavarjula Sai

引用次数: 3

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device 工艺变化对多指栅耦合NMOS ESD保护器件导通电压的影响

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232711

M. Huo, K. Ding, Y. Han, S. Dong, X.Y. Du, D. Huang, B. Song

引用次数: 4

Logic failure analysis 65/45nm device using RCI & nano scale probe 65/45nm器件逻辑失效分析采用RCI &纳米探针

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232699

S.J. Cho, T.E. Kim, J.K. Hong, J.T. Hong, H. Kim, Y.W. Han, S. Kwon, Y. Oh

引用次数: 5

Electrical characteristics of leakage issues caused by defective Ni salicide 电学特性缺陷引起的水化镍泄漏问题

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232669

S. Toh, P. K. Tan, E. Hendarto, Q. Deng, H. Lin, Y. W. Goh, L. Zhu, H. Tan, Q.F. Wang, R. He, J. Lam, L. Hsia, Z. Mai

引用次数: 1

Current topics on PV module and system reliability 关于光伏组件和系统可靠性的最新话题

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232564

L. Ji

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引用次数: 0

Full Dynamic Laser simulation set up 全动态激光模拟设置

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232665

A. Deyine, K. Sanchez, P. Perdu, F. Bourcier, F. Battistella, F. Bereil, P. Le Nouy, D. Lewis, H. Deslandes

引用次数: 2

Analysis of alignment modeling for Nikon steppers 尼康步进电机对准建模分析

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI: 10.1109/IPFA.2009.5232634

F. He, Jun Wang, Zhiming Wu, Yadong Jiang, K. Yuan

引用次数: 0