Physical and structural properties of HfO2/SiO2 gate stack high-k dielectrics deposited by atomic layer deposition

Abstract

The ultra-thin HfO2/SiO2 gate stack high-k dielectrics were deposited by Atomic Layer Deposition. The physical and structural properties of the HfO2/SiO2 films were investigated. Atomic force microscopy, transmission electron microscopy and x-ray reflectivity analysis results indicate that the atomic layer deposition can deposit HfO2/SiO2 gate stack dielectrics with good performance.