Z. Tao, Hong-Xia Liu, Qianwei Kuang, Nai-Qiong Cai, H. Yue, Zhao Aaron, Tallavarjula Sai
{"title":"原子层沉积HfO2/SiO2栅极堆高k介电材料的物理和结构特性","authors":"Z. Tao, Hong-Xia Liu, Qianwei Kuang, Nai-Qiong Cai, H. Yue, Zhao Aaron, Tallavarjula Sai","doi":"10.1109/IPFA.2009.5232575","DOIUrl":null,"url":null,"abstract":"The ultra-thin HfO<inf>2</inf>/SiO<inf>2</inf> gate stack high-k dielectrics were deposited by Atomic Layer Deposition. The physical and structural properties of the HfO<inf>2</inf>/SiO<inf>2</inf> films were investigated. Atomic force microscopy, transmission electron microscopy and x-ray reflectivity analysis results indicate that the atomic layer deposition can deposit HfO<inf>2</inf>/SiO<inf>2</inf> gate stack dielectrics with good performance.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Physical and structural properties of HfO2/SiO2 gate stack high-k dielectrics deposited by atomic layer deposition\",\"authors\":\"Z. Tao, Hong-Xia Liu, Qianwei Kuang, Nai-Qiong Cai, H. Yue, Zhao Aaron, Tallavarjula Sai\",\"doi\":\"10.1109/IPFA.2009.5232575\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The ultra-thin HfO<inf>2</inf>/SiO<inf>2</inf> gate stack high-k dielectrics were deposited by Atomic Layer Deposition. The physical and structural properties of the HfO<inf>2</inf>/SiO<inf>2</inf> films were investigated. Atomic force microscopy, transmission electron microscopy and x-ray reflectivity analysis results indicate that the atomic layer deposition can deposit HfO<inf>2</inf>/SiO<inf>2</inf> gate stack dielectrics with good performance.\",\"PeriodicalId\":210619,\"journal\":{\"name\":\"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2009.5232575\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2009.5232575","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Physical and structural properties of HfO2/SiO2 gate stack high-k dielectrics deposited by atomic layer deposition
The ultra-thin HfO2/SiO2 gate stack high-k dielectrics were deposited by Atomic Layer Deposition. The physical and structural properties of the HfO2/SiO2 films were investigated. Atomic force microscopy, transmission electron microscopy and x-ray reflectivity analysis results indicate that the atomic layer deposition can deposit HfO2/SiO2 gate stack dielectrics with good performance.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
