65/45nm器件逻辑失效分析采用RCI &纳米探针

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI:10.1109/IPFA.2009.5232699

S.J. Cho, T.E. Kim, J.K. Hong, J.T. Hong, H. Kim, Y.W. Han, S. Kwon, Y. Oh

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引用次数: 5

摘要

扫描链失效分析相对于记忆分析和缺陷监测测试单元组(DTEG)的大面积分析更为困难和复杂。通过电阻对比成像(RCI)和纳米探针技术，验证了65nm以下器件逻辑工艺的各种缺陷是容易分析的。此外，在具有长失效网的扫描ATPG (Automatic Test Pattern Generation)故障中检测到Metal5 (M5)桥缺陷(Short case)，并通过Unetch发现Via4 (V4)开路缺陷(open case)，证实了分析高电阻过通故障的可能性。验证了金属7 (M7)的Cu线空洞位置可以定位在高能级金属层。认为它作为一种利用RCI原理和纳米探针的技术，将在65nm以下的失效分析中得到广泛应用，并对提高良率做出很大贡献。

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Logic failure analysis 65/45nm device using RCI & nano scale probe

Scan chain failure analysis is more difficult and complicated compared to memory analysis and analysis of defect monitoring test element group (DTEG) which has a large area is also difficult. This paper has verified that various defects of logic process sub 65nm device are easily analyzed through Resistive Contrast Imaging (RCI) and nanoprobe. In addition, Metal5 (M5) bridge defect (Short case) was detected in failure of scan ATPG (Automatic Test Pattern Generation) which has long failing nets and by discovering Via4 (V4) open defect (Open case) by Unetch, it was confirmed that it is possible to analyze high resistance Via failure. And it was verified that position of Cu line void of metal7 (M7) can be localized at high level metal layer. It is judged that it will be used usefully in failure analysis sub 65nm in the future as a technique utilizing principle of RCI and nanoprobe and also it will make lots of contributions to improvement of yield.

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来源期刊

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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