集电极强电磁脉冲作用下双极晶体管的瞬态响应

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI:10.1109/IPFA.2009.5232611

Xiaowen Xi, C. Chai, Xingrong Ren, Yintang Yang, Bing Zhang

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引用次数: 3

摘要

本文研究了强电磁脉冲(EMP)作用下双极晶体管(BJT)的注入损伤。利用美第奇所设计的器件模拟器，得到并分析了电场、电流密度和温度的分布和变化。仿真结果表明，当施加电压达到一定值时，在雪崩击穿后，集电极和发射极之间出现了导电隧道。同时考虑电场和电流密度，发现烧坏首先出现在N-N+界面。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Transient response of bipolar transistor under intense electromagnetic pulse on collector

A study on the injection-induced damage to bipolar transistor (BJT) under the intense electromagnetic pulse (EMP) is carried out in this paper. The distribution and variation of the electric field, current density and temperature are obtained and analyzed with the device simulator Medici employed. Simulation results show that when the applied voltage reaches a certain value, there is a conducting tunnel appearing between the collector and the emitter following the avalanche breakdown. Considering both values of the electric field and the current density, it is found that the burnout appears in the N-N+ interface firstly.

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2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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