高速FIB除硅辅助下的硅通孔失效分析

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI:10.1109/IPFA.2009.5232689

Pascal Gounet, M. Mercier, D. Serre, C. Rue

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引用次数: 0

摘要

高速FIB硅沟槽是半导体器件上用于去除大型结构周围衬底材料的技术。在去除周围的基板材料后，可以对通常太大的结构进行FIB横断面分析。通过硅通孔(tsv)的详细检查，但其他应用也简要描述。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Failure analysis of Through-Silicon-Vias Aided by high-speed FIB silicon removal

High-speed FIB silicon trenching is used to remove substrate materials around large structures on semiconductor devices. After removing the surrounding substrate material, it is possible to perform FIB cross-sectional analyses on structures that would normally be too large for such an approach. Through-Silicon-Vias (TSVs) are examined in detail, but other applications are also briefly described.

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2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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