应变si上TaYOx栅介质的顺磁缺陷和电荷俘获

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI:10.1109/IPFA.2009.5232718

B. Majhi, C. Mahata, M. Bera, M. K. Hota, S. Mallik, T. Das, C. Maiti

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引用次数: 2

摘要

利用内部光发射和磁共振技术研究了Al/TaYOx/应变si /Si0.8Ge0.2 MIS电容器中存在缺陷的电荷捕获动力学和化学性质。采用CVS和CCS技术研究了系统的可靠性特性。本文报道了电子顺磁共振(EPR)和内部光电发射(IPE)对电荷俘获行为的研究结果。

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Paramagnetic defects and charge trapping in TaYOx gate dielectrics on strained-Si

Charge trapping kinetics and chemical nature of defects present in Al/TaYOx/strained-Si/Si0.8Ge0.2 MIS capacitors have been studied using internal photoemission and magnetic resonance. Reliability characteristics have been studied using CVS and CCS techniques. Results of electron paramagnetic resonance (EPR) and internal photoemission (IPE) studies on the charge trapping behavior are reported.

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2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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