Transient response of bipolar transistor under intense electromagnetic pulse on collector

Abstract

A study on the injection-induced damage to bipolar transistor (BJT) under the intense electromagnetic pulse (EMP) is carried out in this paper. The distribution and variation of the electric field, current density and temperature are obtained and analyzed with the device simulator Medici employed. Simulation results show that when the applied voltage reaches a certain value, there is a conducting tunnel appearing between the collector and the emitter following the avalanche breakdown. Considering both values of the electric field and the current density, it is found that the burnout appears in the N-N+ interface firstly.