硅太阳能电池辐射诱发位移损伤的建模:Frenkel缺陷

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI:10.1109/IPFA.2009.5232562

T. Maiti, C. Maiti

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引用次数: 1

摘要

对辐射引起的位移损伤机理进行了研究，并通过初始计算进行了解释。在器件建模中考虑了辐射诱导的Frenkel缺陷的影响。研究了太阳能电池的电流电压特性，建立了电池的寿命起始参数和辐照引起的变化。

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Modeling of radiation-induced displacement damage in silicon solar cells: Frenkel defect

Displacement damage mechanisms due to radiation have been investigated and interpreted via abinitio calculation. Effect of radiation-induced Frenkel defect has been incorporated in device modeling. Current voltage characteristics are studied to establish beginning of life (BOL) parameters of the solar cells and the changes that occur due to irradiation (EOL).

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2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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