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2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)最新文献

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Volume and quality impacts on reliability: a new game for GaAs 数量和质量对可靠性的影响:GaAs的新游戏
2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) Pub Date : 2000-11-05 DOI: 10.1109/GAASRW.2000.902426
W. Roesch
{"title":"Volume and quality impacts on reliability: a new game for GaAs","authors":"W. Roesch","doi":"10.1109/GAASRW.2000.902426","DOIUrl":"https://doi.org/10.1109/GAASRW.2000.902426","url":null,"abstract":"This work advances the knowledge of GaAs reliability by showing high temperature lifetesting is NOT the only game in town. Other accelerated tests are more effective in generating failures-especially failures that are likely to occur in typical use conditions. This work also demonstrates that emphasis on volume and quality aspects of semiconductor manufacturing will result in improved reliability results. Communication with high volume customers and larger sample sizes are offered as methods for finding \"real\" failure mechanisms.","PeriodicalId":199689,"journal":{"name":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125830684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Breakdown voltage of AlGaAs/InGaAs HEMT submitted to life-tests in impact ionization regime 冲击电离条件下AlGaAs/InGaAs HEMT的击穿电压
2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) Pub Date : 2000-11-05 DOI: 10.1109/GAASRW.2000.902416
B. Lambert, N. Malbert, N. Labat, A. Touboul, P. Huguet
{"title":"Breakdown voltage of AlGaAs/InGaAs HEMT submitted to life-tests in impact ionization regime","authors":"B. Lambert, N. Malbert, N. Labat, A. Touboul, P. Huguet","doi":"10.1109/GAASRW.2000.902416","DOIUrl":"https://doi.org/10.1109/GAASRW.2000.902416","url":null,"abstract":"The P-HEMT technology under test is widely used in telecommunications from Ku to Ka-band for medium power amplification. In this operating regime, the impact ionization mechanism is present and its influence on the long-term stability of devices is not well known. In this work, we have studied the influence of the impact ionization and thermal stresses on DC electrical characteristics and their temperature dependence. The dynamic electrical vehicle (DEC) under test is based on an AlGaAs/InGaAs P-HEMT with a delta doped layer and a single gate recess.","PeriodicalId":199689,"journal":{"name":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123351036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Location of defective cells in HBT power amplifier arrays using IR emission microscopy 利用红外发射显微镜定位HBT功率放大器阵列中的缺陷细胞
2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) Pub Date : 2000-11-05 DOI: 10.1109/GAASRW.2000.902429
Peter Dai, P. Canfield
{"title":"Location of defective cells in HBT power amplifier arrays using IR emission microscopy","authors":"Peter Dai, P. Canfield","doi":"10.1109/GAASRW.2000.902429","DOIUrl":"https://doi.org/10.1109/GAASRW.2000.902429","url":null,"abstract":"A logical method and approach to a very low percentage failure rate problem for HBT PA products is presented. The value of the IR emission technique coupled with junction breakdown measurements demonstrated the capability to identify a potentially bad HBT cell contained in an array of a few hundred HBT cells. HBT cells with low junction breakdown characteristics are demonstrated to be a potential killer to the whole PA. The cause of low breakdown can be either process or epi-layer defects, as well as by ESD or reverse voltage under certain conditions.","PeriodicalId":199689,"journal":{"name":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","volume":"34 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120852047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Life testing and failure analysis of PHEMT MMICs PHEMT mmic寿命测试及失效分析
2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) Pub Date : 2000-11-05 DOI: 10.1109/GAASRW.2000.902418
W. Anderson, J. Roussos, J. Mittereder
{"title":"Life testing and failure analysis of PHEMT MMICs","authors":"W. Anderson, J. Roussos, J. Mittereder","doi":"10.1109/GAASRW.2000.902418","DOIUrl":"https://doi.org/10.1109/GAASRW.2000.902418","url":null,"abstract":"Accelerated high temperature RF life testing was used to investigate the reliability of two-stage GaAs MMIC power amplifiers based on 0.25 m PHEMT technology. Life testing was performed at elevated baseplate temperatures with MMICs operating at typical DC bias conditions and large signal RF drive levels of two dB compression. The resulting failure distribution was log normal and the estimated median life time extrapolated to a channel temperature of 140 C was 2.3x10/sup 6/ hours with an activation energy of 1.1 eV.","PeriodicalId":199689,"journal":{"name":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132212502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Production InGaP HBT reliability 生产InGaP HBT可靠性
2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) Pub Date : 2000-11-05 DOI: 10.1109/GAASRW.2000.902428
D. Cheskis, A. P. Young, B. Bayraktaroglu
{"title":"Production InGaP HBT reliability","authors":"D. Cheskis, A. P. Young, B. Bayraktaroglu","doi":"10.1109/GAASRW.2000.902428","DOIUrl":"https://doi.org/10.1109/GAASRW.2000.902428","url":null,"abstract":"We report on the long term reliability of InGaP emitter HBTs fabricated in our 150 mm production facility. The estimated median-time-to-failure of the devices fabricated in our manufacturing process is in excess of 10/sup 9/ hours with an activation energy of E/sub A/=1.8/spl plusmn/0.2 eV. A lifetime of 3500 hours has been measured at a junction temperature, T/sub j/, of 300/spl deg/C and current density, J/sub c/=25 kA/cm/sup 2/. These are the first reported reliability results of a 150 mm InGaP HBT manufacturing process. Additionally, we have measured the variability of the device reliability dependent upon epitaxial material supplier.","PeriodicalId":199689,"journal":{"name":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123629618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Reliability of 6 inch 0.4 /spl mu/m-gate PHEMT device 6英寸0.4 /spl mu/m栅极PHEMT器件的可靠性
2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) Pub Date : 2000-11-05 DOI: 10.1109/GAASRW.2000.902419
Bin Yang, Weiqi Li, E. Casterline
{"title":"Reliability of 6 inch 0.4 /spl mu/m-gate PHEMT device","authors":"Bin Yang, Weiqi Li, E. Casterline","doi":"10.1109/GAASRW.2000.902419","DOIUrl":"https://doi.org/10.1109/GAASRW.2000.902419","url":null,"abstract":"We have demonstrated that the 0.4 /spl mu/m gatelength 6 inch PHEMT device has well behaved I-V characteristics. MTTF of the device is 2x10/sup 6/ hours at 1000 C channel temperature. The activation energy is calculated to be E/sub A/=1.15 eV. The failure mechanism of the PHEMT device is found to be the recovery of the surface damage induced by the gate SiN plasma etch process.","PeriodicalId":199689,"journal":{"name":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125191539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Combined temperature and current stressing of MOVPE-grown GaAs/InGaP HBTs movpe生长GaAs/InGaP HBTs的复合温度和电流应力
2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) Pub Date : 2000-11-05 DOI: 10.1109/GAASRW.2000.902430
Joachim Wirfl, P. Kurpas, F. Brunner, M. Mai, T. Bergunde, T. Spitzbart, M. Weyers
{"title":"Combined temperature and current stressing of MOVPE-grown GaAs/InGaP HBTs","authors":"Joachim Wirfl, P. Kurpas, F. Brunner, M. Mai, T. Bergunde, T. Spitzbart, M. Weyers","doi":"10.1109/GAASRW.2000.902430","DOIUrl":"https://doi.org/10.1109/GAASRW.2000.902430","url":null,"abstract":"HBTs for numerous applications increasingly penetrate the market thus placing significant pressure towards the development of highly reliable devices. MOVPE grown InGaP/GaAs-HBTs have recently shown their great potential by demonstrating remarkable reliability values. This paper focuses on the gradual and sudden degradation of InGaP/GaAs HBT DC-parameters during combined thermal and electrical lifetime testing. The tests have been performed on GaInP/GaAs HBTs developed for highly efficient microwave power amplifiers.","PeriodicalId":199689,"journal":{"name":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131249287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A comparative study of thermal measurement techniques currently available to the semiconductor industry 热测量技术的比较研究，目前可用于半导体工业
2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) Pub Date : 2000-11-05 DOI: 10.1109/GAASRW.2000.902423
T. Kole
{"title":"A comparative study of thermal measurement techniques currently available to the semiconductor industry","authors":"T. Kole","doi":"10.1109/GAASRW.2000.902423","DOIUrl":"https://doi.org/10.1109/GAASRW.2000.902423","url":null,"abstract":"Temperature accelerates many GaAs semiconductor failure mechanisms; therefore accurately determining the junction or channel temperature of a GaAs device is a critical step in gauging its reliability. To that end the purpose of this paper is to illustrate and compare several methods for determining junction temperatures of GaAs semiconductor devices. Techniques such as, finite element modeling, forward diode voltage drop, nematic liquid crystals, thermochromic liquid crystals, and infrared imaging are compared for their benefits and limitations. It is the intent of the paper not to propose one technique over another but to explain each in detail and leave it to the reader to evaluate the technique that is appropriate for the end application.","PeriodicalId":199689,"journal":{"name":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128436380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Looking for an acceleration law for the high-field degradation of AlGaAs/GaAs power HFETs: can MOSFETs help? 寻找AlGaAs/GaAs功率hfet高场退化的加速定律:mosfet可以帮助吗?
2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) Pub Date : 2000-11-05 DOI: 10.1109/GAASRW.2000.902424
R. Menozzi, G. Sozzi, E. Tediosi, D. Dieci, C. Lanzieri, C. Canali
{"title":"Looking for an acceleration law for the high-field degradation of AlGaAs/GaAs power HFETs: can MOSFETs help?","authors":"R. Menozzi, G. Sozzi, E. Tediosi, D. Dieci, C. Lanzieri, C. Canali","doi":"10.1109/GAASRW.2000.902424","DOIUrl":"https://doi.org/10.1109/GAASRW.2000.902424","url":null,"abstract":"This works shows high-field degradation data measured on AlGaAs/GaAs HFETs under different stress bias conditions. The aim is at extracting indications on the relevant factors accelerating the gradual degradation of the HFETs under hot-electron and impact ionization conditions. Popular acceleration laws used for MOSFETs are applied, and numerical simulations are used as an aid for the physical interpretation of the results.","PeriodicalId":199689,"journal":{"name":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125196120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A technique for electrically measuring the thermal resistance of GaAs bulk resistors 一种测量砷化镓体电阻器热阻的技术
2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) Pub Date : 2000-11-05 DOI: 10.1109/GAASRW.2000.902421
E. Sabin, J. Scarpulla, Y. Chou, G. Shimamoto
{"title":"A technique for electrically measuring the thermal resistance of GaAs bulk resistors","authors":"E. Sabin, J. Scarpulla, Y. Chou, G. Shimamoto","doi":"10.1109/GAASRW.2000.902421","DOIUrl":"https://doi.org/10.1109/GAASRW.2000.902421","url":null,"abstract":"An electrical technique to measure the thermal resistance of GaAs bulk resistors is presented. The thermal resistance of several resistors was determined. The difference in these results relative to a liquid crystal method is discussed. Then, the reliability impact on the resistors from self-heating is studied.","PeriodicalId":199689,"journal":{"name":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128692298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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