Joachim Wirfl, P. Kurpas, F. Brunner, M. Mai, T. Bergunde, T. Spitzbart, M. Weyers
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Combined temperature and current stressing of MOVPE-grown GaAs/InGaP HBTs
HBTs for numerous applications increasingly penetrate the market thus placing significant pressure towards the development of highly reliable devices. MOVPE grown InGaP/GaAs-HBTs have recently shown their great potential by demonstrating remarkable reliability values. This paper focuses on the gradual and sudden degradation of InGaP/GaAs HBT DC-parameters during combined thermal and electrical lifetime testing. The tests have been performed on GaInP/GaAs HBTs developed for highly efficient microwave power amplifiers.
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