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2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)最新文献

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Determination of InP-based HBT device models at end of life 在寿命结束时基于inp的HBT器件模型的确定
2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) Pub Date : 2000-11-05 DOI: 10.1109/GAASRW.2000.902427
S. Thomas, C. Fields, F. Williams, M. Madhav
{"title":"Determination of InP-based HBT device models at end of life","authors":"S. Thomas, C. Fields, F. Williams, M. Madhav","doi":"10.1109/GAASRW.2000.902427","DOIUrl":"https://doi.org/10.1109/GAASRW.2000.902427","url":null,"abstract":"InP-based HBTs have been stressed to approximate degradation from a 15 year system life and device models were generated. The basic characteristics of these models are increases in the emitter resistance (Re) and in the base-collector capacitance (Cjc). The end of life model can be obtained from the standard model by increasing Re from 3.6 to 5.7 /spl Omega/ and Cjc from 20.1 to 23.4 fF. These changes lead to decreases in: transistor gain, Ft, and Fmax, and an increase in the base-emitter voltage (V/sub bel/) at typical operating conditions. The changes in the device parameters generally fall within the normal process variations. No increase in low current base emitter voltage (V/sub be0/) occurs, indicating the lack of Be diffusion into the emitter.","PeriodicalId":199689,"journal":{"name":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125288046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Reliability life tests of E/D self-aligned gate MESFET process E/D自对准栅MESFET工艺可靠性寿命试验
2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) Pub Date : 2000-11-05 DOI: 10.1109/GAASRW.2000.902425
Xinxing Yang, P. Ersland
{"title":"Reliability life tests of E/D self-aligned gate MESFET process","authors":"Xinxing Yang, P. Ersland","doi":"10.1109/GAASRW.2000.902425","DOIUrl":"https://doi.org/10.1109/GAASRW.2000.902425","url":null,"abstract":"We present details of the latest constant stress life test (CSLT) results from reliability tests of the self-aligned gate MESFET E/D process, and make a comparison of the reliability predictions from CSLT and step stress life tests (SSLT).","PeriodicalId":199689,"journal":{"name":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126908337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The reliability of short length GaAs bulk resistors 短长度GaAs体电阻的可靠性
2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) Pub Date : 2000-11-05 DOI: 10.1109/GAASRW.2000.902422
E. Sabin, J. Scarpulla, Y. Chou
{"title":"The reliability of short length GaAs bulk resistors","authors":"E. Sabin, J. Scarpulla, Y. Chou","doi":"10.1109/GAASRW.2000.902422","DOIUrl":"https://doi.org/10.1109/GAASRW.2000.902422","url":null,"abstract":"The reliability of short length bulk resistors is evaluated for design current density stressing and for highly accelerated stressing. The failure modes for these different stress conditions are compared and a mechanism is proposed to explain these failure modes.","PeriodicalId":199689,"journal":{"name":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121133922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ka-band InP HEMT MMIC reliability ka波段InP HEMT MMIC可靠性
2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) Pub Date : 2000-11-05 DOI: 10.1109/GAASRW.2000.902417
B. Paine, R. Wong, A. Schmitz, R. Walden, L. Nguyen, M. Delaney, K. Hum
{"title":"Ka-band InP HEMT MMIC reliability","authors":"B. Paine, R. Wong, A. Schmitz, R. Walden, L. Nguyen, M. Delaney, K. Hum","doi":"10.1109/GAASRW.2000.902417","DOIUrl":"https://doi.org/10.1109/GAASRW.2000.902417","url":null,"abstract":"We report on reliability tests on InP HEMT MMICs by two approaches. First we describe elevated-temperature lifetests on Ka-band LNA MMICs, for studying all thermally-driven degradation mechanisms. Then we describe ramped-voltage studies of separate capacitors, for measuring time-dependent dielectric breakdown (TDDB), which is accelerated mostly by elevated voltage.","PeriodicalId":199689,"journal":{"name":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","volume":"43 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116643300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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