E/D自对准栅MESFET工艺可靠性寿命试验

2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) Pub Date : 2000-11-05 DOI:10.1109/GAASRW.2000.902425

Xinxing Yang, P. Ersland

{"title":"E/D自对准栅MESFET工艺可靠性寿命试验","authors":"Xinxing Yang, P. Ersland","doi":"10.1109/GAASRW.2000.902425","DOIUrl":null,"url":null,"abstract":"We present details of the latest constant stress life test (CSLT) results from reliability tests of the self-aligned gate MESFET E/D process, and make a comparison of the reliability predictions from CSLT and step stress life tests (SSLT).","PeriodicalId":199689,"journal":{"name":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reliability life tests of E/D self-aligned gate MESFET process\",\"authors\":\"Xinxing Yang, P. Ersland\",\"doi\":\"10.1109/GAASRW.2000.902425\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present details of the latest constant stress life test (CSLT) results from reliability tests of the self-aligned gate MESFET E/D process, and make a comparison of the reliability predictions from CSLT and step stress life tests (SSLT).\",\"PeriodicalId\":199689,\"journal\":{\"name\":\"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)\",\"volume\":\"81 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-11-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAASRW.2000.902425\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAASRW.2000.902425","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

本文详细介绍了自对准栅MESFET E/D工艺可靠性试验的最新恒定应力寿命试验(CSLT)结果，并对CSLT和阶梯应力寿命试验(SSLT)的可靠性预测进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Reliability life tests of E/D self-aligned gate MESFET process

We present details of the latest constant stress life test (CSLT) results from reliability tests of the self-aligned gate MESFET E/D process, and make a comparison of the reliability predictions from CSLT and step stress life tests (SSLT).

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2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)

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