Ka-band InP HEMT MMIC reliability

2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) Pub Date : 2000-11-05 DOI:10.1109/GAASRW.2000.902417

B. Paine, R. Wong, A. Schmitz, R. Walden, L. Nguyen, M. Delaney, K. Hum

引用次数: 7

Abstract

We report on reliability tests on InP HEMT MMICs by two approaches. First we describe elevated-temperature lifetests on Ka-band LNA MMICs, for studying all thermally-driven degradation mechanisms. Then we describe ramped-voltage studies of separate capacitors, for measuring time-dependent dielectric breakdown (TDDB), which is accelerated mostly by elevated voltage.

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ka波段InP HEMT MMIC可靠性

我们报告了两种方法对InP HEMT mmic的可靠性测试。首先，我们描述了ka波段LNA mmic的高温寿命试验，以研究所有热驱动的降解机制。然后，我们描述了用于测量时间相关介质击穿(TDDB)的单独电容器的斜坡电压研究，该击穿主要由升高的电压加速。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)

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