短长度GaAs体电阻的可靠性

E. Sabin, J. Scarpulla, Y. Chou
{"title":"短长度GaAs体电阻的可靠性","authors":"E. Sabin, J. Scarpulla, Y. Chou","doi":"10.1109/GAASRW.2000.902422","DOIUrl":null,"url":null,"abstract":"The reliability of short length bulk resistors is evaluated for design current density stressing and for highly accelerated stressing. The failure modes for these different stress conditions are compared and a mechanism is proposed to explain these failure modes.","PeriodicalId":199689,"journal":{"name":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The reliability of short length GaAs bulk resistors\",\"authors\":\"E. Sabin, J. Scarpulla, Y. Chou\",\"doi\":\"10.1109/GAASRW.2000.902422\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The reliability of short length bulk resistors is evaluated for design current density stressing and for highly accelerated stressing. The failure modes for these different stress conditions are compared and a mechanism is proposed to explain these failure modes.\",\"PeriodicalId\":199689,\"journal\":{\"name\":\"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-11-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAASRW.2000.902422\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAASRW.2000.902422","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

在设计电流密度应力和高加速应力条件下,对短长度体电阻的可靠性进行了评价。比较了这些不同应力条件下的破坏模式,并提出了一种解释这些破坏模式的机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The reliability of short length GaAs bulk resistors
The reliability of short length bulk resistors is evaluated for design current density stressing and for highly accelerated stressing. The failure modes for these different stress conditions are compared and a mechanism is proposed to explain these failure modes.
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