{"title":"在寿命结束时基于inp的HBT器件模型的确定","authors":"S. Thomas, C. Fields, F. Williams, M. Madhav","doi":"10.1109/GAASRW.2000.902427","DOIUrl":null,"url":null,"abstract":"InP-based HBTs have been stressed to approximate degradation from a 15 year system life and device models were generated. The basic characteristics of these models are increases in the emitter resistance (Re) and in the base-collector capacitance (Cjc). The end of life model can be obtained from the standard model by increasing Re from 3.6 to 5.7 /spl Omega/ and Cjc from 20.1 to 23.4 fF. These changes lead to decreases in: transistor gain, Ft, and Fmax, and an increase in the base-emitter voltage (V/sub bel/) at typical operating conditions. The changes in the device parameters generally fall within the normal process variations. No increase in low current base emitter voltage (V/sub be0/) occurs, indicating the lack of Be diffusion into the emitter.","PeriodicalId":199689,"journal":{"name":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Determination of InP-based HBT device models at end of life\",\"authors\":\"S. Thomas, C. Fields, F. Williams, M. Madhav\",\"doi\":\"10.1109/GAASRW.2000.902427\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InP-based HBTs have been stressed to approximate degradation from a 15 year system life and device models were generated. The basic characteristics of these models are increases in the emitter resistance (Re) and in the base-collector capacitance (Cjc). The end of life model can be obtained from the standard model by increasing Re from 3.6 to 5.7 /spl Omega/ and Cjc from 20.1 to 23.4 fF. These changes lead to decreases in: transistor gain, Ft, and Fmax, and an increase in the base-emitter voltage (V/sub bel/) at typical operating conditions. The changes in the device parameters generally fall within the normal process variations. No increase in low current base emitter voltage (V/sub be0/) occurs, indicating the lack of Be diffusion into the emitter.\",\"PeriodicalId\":199689,\"journal\":{\"name\":\"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-11-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAASRW.2000.902427\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAASRW.2000.902427","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Determination of InP-based HBT device models at end of life
InP-based HBTs have been stressed to approximate degradation from a 15 year system life and device models were generated. The basic characteristics of these models are increases in the emitter resistance (Re) and in the base-collector capacitance (Cjc). The end of life model can be obtained from the standard model by increasing Re from 3.6 to 5.7 /spl Omega/ and Cjc from 20.1 to 23.4 fF. These changes lead to decreases in: transistor gain, Ft, and Fmax, and an increase in the base-emitter voltage (V/sub bel/) at typical operating conditions. The changes in the device parameters generally fall within the normal process variations. No increase in low current base emitter voltage (V/sub be0/) occurs, indicating the lack of Be diffusion into the emitter.
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