6英寸0.4 /spl mu/m栅极PHEMT器件的可靠性

2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) Pub Date : 2000-11-05 DOI:10.1109/GAASRW.2000.902419

Bin Yang, Weiqi Li, E. Casterline

{"title":"6英寸0.4 /spl mu/m栅极PHEMT器件的可靠性","authors":"Bin Yang, Weiqi Li, E. Casterline","doi":"10.1109/GAASRW.2000.902419","DOIUrl":null,"url":null,"abstract":"We have demonstrated that the 0.4 /spl mu/m gatelength 6 inch PHEMT device has well behaved I-V characteristics. MTTF of the device is 2x10/sup 6/ hours at 1000 C channel temperature. The activation energy is calculated to be E/sub A/=1.15 eV. The failure mechanism of the PHEMT device is found to be the recovery of the surface damage induced by the gate SiN plasma etch process.","PeriodicalId":199689,"journal":{"name":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Reliability of 6 inch 0.4 /spl mu/m-gate PHEMT device\",\"authors\":\"Bin Yang, Weiqi Li, E. Casterline\",\"doi\":\"10.1109/GAASRW.2000.902419\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have demonstrated that the 0.4 /spl mu/m gatelength 6 inch PHEMT device has well behaved I-V characteristics. MTTF of the device is 2x10/sup 6/ hours at 1000 C channel temperature. The activation energy is calculated to be E/sub A/=1.15 eV. The failure mechanism of the PHEMT device is found to be the recovery of the surface damage induced by the gate SiN plasma etch process.\",\"PeriodicalId\":199689,\"journal\":{\"name\":\"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-11-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAASRW.2000.902419\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAASRW.2000.902419","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

我们已经证明了0.4 /spl mu/m栅极长度6英寸PHEMT器件具有良好的I-V特性。在1000℃通道温度下，设备的MTTF为2 × 10/sup 6/ h。计算活化能为E/sub A/=1.15 eV。发现PHEMT器件的失效机制是栅极等离子体腐蚀过程中表面损伤的恢复。

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Reliability of 6 inch 0.4 /spl mu/m-gate PHEMT device

We have demonstrated that the 0.4 /spl mu/m gatelength 6 inch PHEMT device has well behaved I-V characteristics. MTTF of the device is 2x10/sup 6/ hours at 1000 C channel temperature. The activation energy is calculated to be E/sub A/=1.15 eV. The failure mechanism of the PHEMT device is found to be the recovery of the surface damage induced by the gate SiN plasma etch process.

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2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)

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