Life testing and failure analysis of PHEMT MMICs

2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) Pub Date : 2000-11-05 DOI:10.1109/GAASRW.2000.902418

W. Anderson, J. Roussos, J. Mittereder

引用次数: 7

Abstract

Accelerated high temperature RF life testing was used to investigate the reliability of two-stage GaAs MMIC power amplifiers based on 0.25 m PHEMT technology. Life testing was performed at elevated baseplate temperatures with MMICs operating at typical DC bias conditions and large signal RF drive levels of two dB compression. The resulting failure distribution was log normal and the estimated median life time extrapolated to a channel temperature of 140 C was 2.3x10/sup 6/ hours with an activation energy of 1.1 eV.

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PHEMT mmic寿命测试及失效分析

采用加速高温射频寿命试验对基于0.25 m PHEMT技术的两级GaAs MMIC功率放大器的可靠性进行了研究。mmic工作在典型的直流偏置条件和2 dB压缩的大信号RF驱动电平下，在升高的底板温度下进行寿命测试。失效分布为对数正态分布，在通道温度为140℃时，估计的中位寿命为2.3 × 10/sup 6/小时，活化能为1.1 eV。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)

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