{"title":"生产InGaP HBT可靠性","authors":"D. Cheskis, A. P. Young, B. Bayraktaroglu","doi":"10.1109/GAASRW.2000.902428","DOIUrl":null,"url":null,"abstract":"We report on the long term reliability of InGaP emitter HBTs fabricated in our 150 mm production facility. The estimated median-time-to-failure of the devices fabricated in our manufacturing process is in excess of 10/sup 9/ hours with an activation energy of E/sub A/=1.8/spl plusmn/0.2 eV. A lifetime of 3500 hours has been measured at a junction temperature, T/sub j/, of 300/spl deg/C and current density, J/sub c/=25 kA/cm/sup 2/. These are the first reported reliability results of a 150 mm InGaP HBT manufacturing process. Additionally, we have measured the variability of the device reliability dependent upon epitaxial material supplier.","PeriodicalId":199689,"journal":{"name":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Production InGaP HBT reliability\",\"authors\":\"D. Cheskis, A. P. Young, B. Bayraktaroglu\",\"doi\":\"10.1109/GAASRW.2000.902428\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the long term reliability of InGaP emitter HBTs fabricated in our 150 mm production facility. The estimated median-time-to-failure of the devices fabricated in our manufacturing process is in excess of 10/sup 9/ hours with an activation energy of E/sub A/=1.8/spl plusmn/0.2 eV. A lifetime of 3500 hours has been measured at a junction temperature, T/sub j/, of 300/spl deg/C and current density, J/sub c/=25 kA/cm/sup 2/. These are the first reported reliability results of a 150 mm InGaP HBT manufacturing process. Additionally, we have measured the variability of the device reliability dependent upon epitaxial material supplier.\",\"PeriodicalId\":199689,\"journal\":{\"name\":\"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)\",\"volume\":\"79 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-11-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAASRW.2000.902428\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAASRW.2000.902428","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We report on the long term reliability of InGaP emitter HBTs fabricated in our 150 mm production facility. The estimated median-time-to-failure of the devices fabricated in our manufacturing process is in excess of 10/sup 9/ hours with an activation energy of E/sub A/=1.8/spl plusmn/0.2 eV. A lifetime of 3500 hours has been measured at a junction temperature, T/sub j/, of 300/spl deg/C and current density, J/sub c/=25 kA/cm/sup 2/. These are the first reported reliability results of a 150 mm InGaP HBT manufacturing process. Additionally, we have measured the variability of the device reliability dependent upon epitaxial material supplier.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
