Reliability of 6 inch 0.4 /spl mu/m-gate PHEMT device

2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) Pub Date : 2000-11-05 DOI:10.1109/GAASRW.2000.902419

Bin Yang, Weiqi Li, E. Casterline

引用次数: 3

Abstract

We have demonstrated that the 0.4 /spl mu/m gatelength 6 inch PHEMT device has well behaved I-V characteristics. MTTF of the device is 2x10/sup 6/ hours at 1000 C channel temperature. The activation energy is calculated to be E/sub A/=1.15 eV. The failure mechanism of the PHEMT device is found to be the recovery of the surface damage induced by the gate SiN plasma etch process.

查看原文本刊更多论文

6英寸0.4 /spl mu/m栅极PHEMT器件的可靠性

我们已经证明了0.4 /spl mu/m栅极长度6英寸PHEMT器件具有良好的I-V特性。在1000℃通道温度下，设备的MTTF为2 × 10/sup 6/ h。计算活化能为E/sub A/=1.15 eV。发现PHEMT器件的失效机制是栅极等离子体腐蚀过程中表面损伤的恢复。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)

自引率

0.00%

发文量