寻找AlGaAs/GaAs功率hfet高场退化的加速定律:mosfet可以帮助吗?

2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) Pub Date : 2000-11-05 DOI:10.1109/GAASRW.2000.902424

R. Menozzi, G. Sozzi, E. Tediosi, D. Dieci, C. Lanzieri, C. Canali

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引用次数: 3

摘要

本文展示了不同应力偏置条件下AlGaAs/GaAs hfet的高场退化数据。目的是提取在热电子和冲击电离条件下加速hfet逐渐降解的相关因素的迹象。应用了mosfet常用的加速度定律，并使用数值模拟作为对结果进行物理解释的辅助。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Looking for an acceleration law for the high-field degradation of AlGaAs/GaAs power HFETs: can MOSFETs help?

This works shows high-field degradation data measured on AlGaAs/GaAs HFETs under different stress bias conditions. The aim is at extracting indications on the relevant factors accelerating the gradual degradation of the HFETs under hot-electron and impact ionization conditions. Popular acceleration laws used for MOSFETs are applied, and numerical simulations are used as an aid for the physical interpretation of the results.

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2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)

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